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Prediction of High-Temperature Operation (up to +300°C) of Reference Voltage Source Built with Temperature-Tolerant Production Technology
P. 609–613.
Lev M. Sambursky, Dmitry A. Parfenov, Mamed R. Ismail-zade, Alexander S. Boldov, Borislav S. Dubyaga
In this work, virtual testing of submicron SOI CMOS reference voltage source integrated circuit was conducted with regard to elevated temperature in the range up to +300°C. Based on simulation results its temperature tolerance figures were estimated.
In book
IEEE Computer Society, 2018.
Khlynov P., Sambursky L. M., Наноиндустрия 2025 Т. 18 № S11-2 (135) С. 848–854
Taking into account the variation in the parameters of SPICE models of semiconductor components in the circuit modeling of electronic components is necessary for a more accurate assessment of the limits of their operability during the design of electronic equipment. This is especially important for equipment designed to operate in conditions other than normal or ...
Added: September 16, 2025
Svaytodukh S. S., Селиверстов С. В., Applied Physics Letters 2023 Vol. 124 No. 12
Added: May 12, 2024
Романова Д. С., Непомнящий О. В., А. И. Легалов et al., Программная инженерия 2022 Т. 13 № 6 С. 259–271
The problems and solutions in the field of ensuring architectural independence and implementation of digital integrated circuits end-to-end design processes are considered. The paper focuses on the need to find a solution to the problem of program portability during the development of integrated circuits. A review of the main software and tools used to design ...
Added: September 13, 2022
Dergachev S., Romanov A., Solovyev R., , in: 2021 International Russian Automation Conference (RusAutoCon).: IEEE, 2021. P. 997–1001.
Added: November 12, 2021
Lev M. Sambursky, Mamed R. Ismail-zade, Nina V. Blokhina, , in: 2020 Moscow Workshop on Electronic and Networking Technologies (MWENT).: IEEE, 2020. P. 1–7.
In this paper, we do an early study of circuit parameter variation for temperature-resistant SOI CMOS production technology on the examples of several standard circuit fragments. Circuits electrical characteristics are simulated at several values of temperature (in the range +27…+300 °C) and with account for MOSFET parameter mismatch figures derived from measurement data. The method ...
Added: May 7, 2020
Ivanov F., Krouk E., Kreshchuk A., , in: 2019 XVI International Symposium "Problems of Redundancy in Information and Control Systems" (REDUNDANCY).: IEEE, 2019. P. 133–138.
Added: March 17, 2020
Альбатша А. М., В кн.: Информационные технологии в науке, бизнесе и образовании: сборник трудов X Международной научно-практической конференции студентов, аспирантов и молодых ученых.: М.: Московский государственный лингвистический университет, 2018. С. 11–15.
The aim of this study is to give a brief overview of contemporary approaches (i.e., design/hardware obfuscation techniques) to protecting design (hardware) from various security threats - reverse engineering, IP piracy, tampering. The paper explains the notion ‘design obfuscation' and describes several existing technical solutions for design obfuscation as based on the analysis of academic ...
Added: December 6, 2019
Альбатша А. М., В кн.: Передовые инновационные разработки. Перспективы и опыт использования, проблемы внедрения в производство: сборник научных статей по итогам четвертой международной научной конференцииЧ. 2.: Каз.: [б.и.], 2019. С. 90–92.
The paper presents a brief overview of contemporary approaches to protecting hardware, i.e. design obfuscation techniques, which are meant to counter threats to design IP security ...
Added: December 6, 2019
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., , in: 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings.: M.: IEEE, 2018. P. 1–5.
Through the analysis of JFET models with account for temperature effects, the most suitable one was selected as a basis for expanding SPICE modeling possibilities to cryogenic-to-high temperature range. Parameter extraction procedure was automated and improved using IC-CAP scripting capabilities. ...
Added: September 8, 2018
Petrosyants K. O., Kharitonov I. A., Lebedev S. et al., Microelectronics and Reliability 2017 Vol. 79 P. 416–425
I-V characteristics and reliability parameters for the set of hardened SOIMOSFET'swith special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range up to 300 °C. The reliability aspects under test for MOSFET's are threshold voltage shift, subthreshold slope and mobility degradation, gate leakage current ...
Added: February 28, 2018
Petrosyants K. O., Lebedev S., Sambursky L. M. et al., , in: 33rd Thermal Measurement, Modeling & Management Symposium (SEMI-THERM). PROCEEDINGS 2017.: Denver: IEEE, 2017. P. 229–234.
Currently, an increasing number of applications are demanding for electronic units capable of operating reliably in the high temperature range: automotive, airplane and space vehicles, geothermal and nuclear energy generation, deep hole drilling [1]–[5]. Today there are two main trends in high-temperature electronics: 1) device sizes scaling for high performance and low-power digital applications (microprocessors, ...
Added: June 9, 2017
Mamed R. Ismail-zade, Aleksandr Y. Romanov, Egor Y. Kuzin et al., , in: Proceedings of the 2017 IEEE Russia Section Young Researchers in Electrical and Electronic Engineering Conference (2017 ElConRus)* 2.: M.: IEEE, 2017. P. 423–428.
Hardware-software system designed for automated SOI MOSFETs characteristics measurement, processing and SPICE model parameter extraction taking into account high temperature (HT) effects (to 300°C) is presented. The essence of the system is comprised of a set of selected measurement instru-ments, measurement and data processing methods with the pur-pose of SPICE model library creation in lightly ...
Added: March 6, 2017
Петросянц К. О., Козынко П. А., Рябов Н. И. et al., М.: Солон-Пресс, 2017.
Рассмотрены принципы работы и электрические характеристики биполярных и МОП-транзисторов интегральных схем, базовых элементов цифровой и аналоговой схемотехники, БМК и ПЛМ, микроконтроллеров и микропроцессоров. Описаны методики выполнения лабораторных, расчетных на ЭВМ, курсовых, самостоятельных и др. работ. Пособие предназначено для бакалавров и магистров различных специальностей, изучающих электронику, микроэлектронику и схемотехнику; отдельные разделы могут быть полезными для аспирантов ...
Added: February 28, 2017
Petrosyants K. O., Kharitonov I. A., Gladysheva E. I., , in: Proceedings of 24-th Telecommunications Forum.: Beograd: IEEE Region 8, Telekom Srbija a.d., 2016. P. 1–4.
It is shown that it is necessary to take into account the radiation influence on CMOS IC’s characteristics in the process of waveforms distortions analysis in satellite communication PCB traces. The special SPICE models for CMOS transistors with radiation dependent model parameters were used for this purpose. The simulation results showed that total dose results ...
Added: November 25, 2016
Konstantin O. Petrosyants, Sergey V. Lebedev, Sambursky L. M. et al., , in: Proceedings of the 22nd International Workshop on Thermal Investigations of ICs and Systems (Therminic 2016).: IEEE, 2016. P. 250–254.
In this work, results of electrical measurements and their analysis are demonstrated for a small-scale 180-nm SOI CMOS
technology in the extended temperature range (up to 300°C). Comparison with high temperature electrical characteristics
of 0.5 um technology is drawn. Modified model for SOI MOSFETs, based on BSIMSOI model is developed and model
parameters are extracted for SPICE simulation ...
Added: November 1, 2016
Лемешко Н. В., Kechiev L., Zakharova S. S., М.: Грифон, 2016.
Рассматриваются вопросы моделирования электронных средств в задачах обеспечения внутриаппаратурной электромагнитной совместимости, основные программные средства и их возможности при проектировании печатных плат. Впервые в отечественной литературе детально рассмотрены IBIS-модели интегральных микросхем. Описаны ключевые слова и правила составления спецификации IBIS для интегральных компонентов, даны рекомендации по практическому применению IBIS-моделей, в том числе в составе коммерческих пакетов. Значительное ...
Added: May 13, 2016
М.: Техносфера, 2016.
В сборник включены тезисы докладов конференции, освещающие актуалные вопросы разаработки, производства и применения отечественных интегральных схем и высокоинтегрированных микроэлектронных модулей. ...
Added: April 13, 2016
Ivanov I., Korolev P., Polesskiy S. et al., , in: 2016 International Siberian Conference on Control and Communications (SIBCON). Proceedings.: M.: HSE, 2016. P. 1–4.
The paper offers methodology for estimation of durability indices of the modern integrated circuit communication network, which has reports about the conducted tests on non-failure operations and conservability, but has no data for the durability. The paper describes two approaches, which apply for generation of basic data and which allow to receive reliable result, typical ...
Added: April 8, 2016
Rjabov N., Gladysheva E. I., В кн.: Твердотельная электроника. Сложные функциональные блоки РЭА. Материалы XIV научно-технической конференции Москва, 7-9 октября 2015 г.: М.: ОАО НПП «ПУЛЬСАР», 2015. С. 244–247.
Разработано программное обеспечение для анализа задержек в межсоединениях ИС в зависимости от температурных эффектов. Методика численого расчета задержек в межсоединениях позволяет учитывать произвольне распределение температуры в кристаллах. ...
Added: February 5, 2016
Zhadnov V. V., Artyukhova M. A., Надежность 2015 No. 1 P. 19–24
The article deals with forecasting the dependability indicators of state-of-the-art spacecraft onboard equipment. The authors demonstrate the applicability of the results of equipment and components testing for resistance to ionizing radiation in forecasting dependability indicators. They prove the applicability of Alfa distribution of time to failure in forecasting CMOS IC reliability and longevity. The paper ...
Added: January 20, 2015