Temperature Characterization of Small-Scale SOI MOSFETs in the Extended Range (to 300°C)

P. 250–254.

Konstantin O. Petrosyants, Sergey V. Lebedev, Sambursky L. M., Veniamin G. Stakhin, Kharitonov I. A.

In this work, results of electrical measurements and their analysis are demonstrated for a small-scale 180-nm SOI CMOS
technology in the extended temperature range (up to 300°C). Comparison with high temperature electrical characteristics
of 0.5 um technology is drawn. Modified model for SOI MOSFETs, based on BSIMSOI model is developed and model
parameters are extracted for SPICE simulation of IC blocks. Results of subsequent SPICE simulation of analog and digital
circuit blocks characteristics are presented. The potential feasibility of using small-scale SOI CMOS technology (180-nm)
for extended temperature range integrated circuits (ICs) is demonstrated.

Keywords: КНИ МОПТ, схемотехническое моделирование, Интегральные схемы, circuit simulation, SPICE-модели, SOI MOSFETs, integrated circuits, высокотемпературная электроника, high-temperature electronics, electrical characteristics measurement, измерение электрических характеристик

In book

Proceedings of the 22nd International Workshop on Thermal Investigations of ICs and Systems (Therminic 2016)

IEEE, 2016.