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Automation of Parameter Extraction Procedure for Si JFET SPICE Model in the −200…+110°C Temperature Range

P. 1–5.
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., Dvornikov O., Lvov B. G., Kharitonov I. A.

Through the analysis of JFET models with account for temperature effects, the most suitable one was selected as a basis for expanding SPICE modeling possibilities to cryogenic-to-high temperature range. Parameter extraction procedure was automated and improved using IC-CAP scripting capabilities.

Language: English
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DOI
Text on another site
Keywords: high-temperature electronicsCryogenic electronicsJFETsSPICE modelingparameter extraction procedure

In book

2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings
M.: IEEE, 2018.
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Added: October 21, 2018
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I-V characteristics and reliability parameters for the set of hardened SOIMOSFET'swith special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range up to 300 °C. The reliability aspects under test for MOSFET's are threshold voltage shift, subthreshold slope and mobility degradation, gate leakage current ...
Added: February 28, 2018
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Currently, an increasing number of applications are demanding for electronic units capable of operating reliably in the high temperature range: automotive, airplane and space vehicles, geothermal and nuclear energy generation, deep hole drilling [1]–[5]. Today there are two main trends in high-temperature electronics: 1) device sizes scaling for high performance and low-power digital applications (microprocessors, ...
Added: June 9, 2017
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Hardware-software system designed for automated SOI  MOSFETs  characteristics  measurement,  processing  and  SPICE  model  parameter  extraction  taking  into  account  high temperature (HT) effects (to 300°C) is presented. The essence of the system is comprised of a set of selected measurement instru-ments, measurement and data processing methods with the pur-pose  of  SPICE  model  library  creation  in  lightly ...
Added: March 6, 2017
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In this work, results of electrical measurements and their analysis are demonstrated for a small-scale 180-nm SOI CMOS technology in the extended temperature range (up to 300°C). Comparison with high temperature electrical characteristics of 0.5 um technology is drawn. Modified model for SOI MOSFETs, based on BSIMSOI model is developed and model parameters are extracted for SPICE simulation ...
Added: November 1, 2016
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