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Моделирование конструктивно-технологических разновидностей КНИ МОП-транзисторов с повышенной радиационной и температурной стойкостью
С. 303–308.
In book
М.: Техносфера, 2016.
Khlynov P., Sambursky L. M., Наноиндустрия 2025 Т. 18 № S11-2 (135) С. 848–854
Taking into account the variation in the parameters of SPICE models of semiconductor components in the circuit modeling of electronic components is necessary for a more accurate assessment of the limits of their operability during the design of electronic equipment. This is especially important for equipment designed to operate in conditions other than normal or ...
Added: September 16, 2025
Дюканов П. А., Kozhukhov M., Popov D. et al., Успехи прикладной физики 2024 Т. 12 № 4 С. 334–342
The paper considers options for the design of an n-channel junction-gate field-effect transistor, integrated into a high-voltage complementary bipolar technological process with isolation by a reverse-biased p-n junction. Criteria for the selection of transistor models according to electrophysical parameters are formulated. Taking into account the criteria, the instrument-technological modeling on bulk silicon substrates was carried ...
Added: September 12, 2024
Дюканов П. А., Kozhukhov M., Popov D. et al., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 672–678
The paper presents the results of Technology Computer Aided Design (TCAD) modeling of the electrophysical parameters of a p-channel junction field-effect transistor (JFET). Three design options have been considered, which are possible when integrated as part of a high-voltage complementary bipolar technological process. Based on the data obtained, the most optimal version of the field-effect ...
Added: September 3, 2024
Petrosyants K. O., Kharitonov I. A., Силкин Д. С. et al., Наноиндустрия 2024 Т. 17 № S10-1(128) С. 302–312
The paper considers qualitative estimations of CMOS SRAM Cells sensitivity to SEU performed for technological nodes varying from 90 nm up to 28 nm using verified TCAD-SPICE software tools and models. The process and results of simulations have been presented. The estimations of CMOS SRAM cells hardness to SEU have been confirmed using SRAM measurement ...
Added: September 3, 2024
Petrosyants K. O., Силкин Д. С., Popov D. et al., Известия высших учебных заведений. Электроника 2023 Т. 28 № 6 С. 826–837
С уменьшением размеров транзисторов возникают условия, когда удар одной частицы затрагивает сразу несколько транзисторов в составе ячейки памяти. Вследствие этого при моделировании недостаточно учитывать один транзистор, в который непосредственно попадает частица. В работе рассмотрена полноразмерная 3D-модель двух n-канальных транзисторов, являющихся частью 6T-ячейки памяти, в которую ударяет заряженная частица. Предложен способ моделирования удара частицы, который позволяет ...
Added: January 11, 2024
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
Ismail-zade M. R., В кн.: Спецвыпуск Наноиндустрия. Российский форум "Микроэлектроника-2021". 7-я Научная конференция «Электронная компонентная база и микроэлектронные модули» Сборник тезисовТ. 14. Вып. 7s.: М.: Рекламно-издательский центр "ТЕХНОСФЕРА", 2021. С. 912–913.
Added: November 5, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 117–120.
The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...
Added: November 5, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Petrosyants K. O., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 35–40.
Conventional BJT, MOSFET, JFET, DMOST, IGBT structures fabricated on bulk silicon and SOI/SOS substrates are characterized as the object of modeling. Popular TCAD simulators and SPICE device models libraries are presented. The model parameters extraction strategies for TCAD device and SPICE circuit simulation based on data proceeding of physical and electrical measurements are described. The ...
Added: December 5, 2020
K. O. Petrosyants, D. A. Popov, M. R. Ismail-Zade et al., , in: Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2020).Вып. 4.: ИППМ РАН, 2020. P. 2–8.
Two types of the MOSFET models available in commercial versions of TCAD and SPICE simulators are completed with additional equations taking into account radiation effects. The adequacy of the models is demonstrated on two examples 1) 0.2 um and 0.24 um SOI/DSOI MOSFETs considering TID effects and single heavy ion impact, and 2) 28 nm bulk MOSFET, 45 nm and 28 nm ...
Added: December 5, 2020
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467–469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB ...
Added: March 24, 2020
Petrosyants K. O., Popov D., В кн.: XVIII Научно-техническая конференция «Электроника, микро- и наноэлектроника»: 24 - 27 июня 2019 года, г. Суздаль, Россия.: НИИСИ РАН, 2019. С. 27–28.
В работе рассматривается использование конструкций КНИ МОПТ с неравномерным легированием канала. С помощью Sentaurus TCAD промоделированы ВАХ КНИ МОПТ с однородным и неравномерным легированием канала (до 50% длины канала), а также зависимость времени задержки КМОП схем на основе исследуемых транзисторов. ...
Added: March 15, 2020
Popov D., В кн.: Международный форум «Микроэлектроника-2019». Школа молодых ученых. Сборник тезисов. Республика Крым, 23-25 сентября 2019 г.: М.: ООО "Спектр", 2019. С. 270–277.
Разработана TCAD RAD-THERM библиотека физических моделей, учитывающих воздействие радиационных (нейтронного, протонного и гамма излучения) и температурных (зависимость коэффициента теплопроводности от температуры, легирования и толщины слоя кремния) эффектов. Результаты моделирования согласуются с экспериментальными данными, погрешность не превышает 15%-20%. ...
Added: November 19, 2019
Andreev D. V., Bondarenko G.G., Andreev V. V. et al., Acta Physica Polonica A 2019 Vol. 36 No. 2 P. 263–266
The paper considers an influence of different kinds of radio-frequency plasma treatments onto modification
of MIS structures with a thermal SiO2 film which is aimed at improvement of electro-physical parameters of
the film. It was found that for the modification of MIS structures it is more preferable to utilize the oxygen
plasma radio-frequency plasma treatment performed by a ...
Added: November 5, 2019
Petrosyants K. O., Popov D., , in: Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019).: Barcelona: International Frequency Sensor Association (IFSA), 2019. P. 24–28.
In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others ...
Added: June 4, 2019
Petrosyants K. O., Kozhukhov M., Popov D., , in: 2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS).: Cluj: IEEE, 2019. P. 1–4.
A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled ...
Added: May 31, 2019
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404–405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019