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Температурные характеристики кольцевых лазеров с активной областью на основе InAs/InGaAs/GaAs-квантовых точек оптического диапазона 1.3 μm
Письма в Журнал технической физики. 2022. Т. 48. № 18. С. 36-40.
Гордеев Н. Ю., Moiseev E., Fominykh N., Kryzhanovskaya N., Бекман А. А., Корнышов Г. О., Зубов Ф. И., Шерняков Ю. М., Zhukov A., Максимов М. В.
The temperature characteristics of ring lasers with a diameter of 480 μm of the novel
structure with an active region based on ten layers of InAs/InGaAs/GaAs quantum dots were studied. Lasers demonstrated a low threshold current density (200 A/cm2 at 20°C in continuous
wave regime), the characteristic temperature of the threshold current in the range 20–100°C
was 68 K, the maximum lasing temperature was 130°C. These values are insignificantly inferior
to the parameters of edge-emitting stripe lasers made from the same epitaxial structure.
Fedor Zubov, Moiseev E., Mikhail Maximov et al., Photonics 2023 Vol. 10 No. 3 Article 290
We report on half-ring lasers that are 100–200 um in diameter and are fabricated by cleaving
the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the
same wafer are compared. The active area of the microlasers is based on the quantum heterostructures
of mixed (0D/2D) dimensionality, referred to as quantum well-dots with ...
Added: June 27, 2023
Максимов М. В., Шерняков Ю. М., Гордеев Н. Ю. et al., Письма в Журнал технической физики 2023 Т. 49 № 5 С. 18-21
We propose an approach for encoding and transmitting information based on the use of a quantum dot laser, which, depending on the injection current, emits either one of two or simultaneously two spectral components, with different wavelengths. When the laser is modulated by current, each lasing line is detected by an independent photodiode, and thus ...
Added: June 27, 2023
Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov et al., IEEE Photonics Technology Letters 2022 Vol. 34 No. 24 P. 1349-1352
We report on the fabrication and studies of
Ø100 μm half-disk lasers with an active region based on
InGaAs/GaAs quantum dots providing very high modal gain.
Such resonators support whispering gallery modes propagating
at the cavity periphery. The microlasers show directional light
outcoupling: continuous-wave output power emitted from the
flat side reaches 17 mW, which is about 7 times greater than
the ...
Added: December 13, 2022
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Makhov I., Ivanov K., Moiseev E. et al., Optics Letters 2023 Vol. 48 No. 13 P. 3515-3518
The peculiarities of two-state lasing in a racetrack microlaser
with an InAs/GaAs quantum dot active region are
investigated by measuring the electroluminescence spectra
at various injection currents and temperatures. Unlike
edge-emitting and microdisk lasers, where two-state lasing
involves the ground and first excited-state optical transitions
of quantum dots, in racetrack microlasers, we observe lasing
through the ground and second excited states. As ...
Added: June 27, 2023
Zhukov A., Moiseev E., Nadtochiy A. et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active
region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: ...
Added: January 26, 2023
Жуков А. Е., СПб. : ПОЛИТЕХ-ПРЕСС, 2019
Пособие включает в себя учебные материалы по физике и технологии полупроводниковых квантовых точек и лазеров на основе квантовых точек, включая микролазеры. Квантовые точки – это новая разновидность полупроводниковых квантоворазмерных структур (наноструктур), в которых движение носителей заряда ограничено во всех трех направлениях. Возникающая в результате размерного квантования модификация плотности состояний, а также большая энергия локализации носителей ...
Added: February 10, 2020
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10-13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Zubov F. I., Shernyakov Y. M., Gordeev N. Y. et al., Quantum Electronics 2022 Vol. 52 No. 7 P. 593-596
Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated ...
Added: December 13, 2022
Lazarev M., Infoscience EPFL 2019 P. 1-163
We have focused on the ability to tune the aluminum (Al) content of the AlGaAs alloy along the growth direction in inverted pyramids (by MOVPE), thus tailoring the potential along a QWR nanostructure. Three parabolic-potential QDs (PQDs) of different potential gradients have thus been realized. The parabolic profiles were changed systematically by fixing the minimum ...
Added: October 29, 2021
Муретова М. Е., Ф.И. Зубов, Асрян Л. В. et al., Физика и техника полупроводников 2022 Т. 56 № 3 С. 363-369
Using numerical simulation, the search for designs of asymmetric barrier layers (ABLs) in a laser
diode with a GaAs waveguide emitting at a wavelength of λ = 980 nm is carried out. A pair of ABLs adjoining
the active region on both sides blocks undesired charge-carrier flows and suppresses parasitic spontaneous
recombination in the waveguide layers. Optimal designs ...
Added: August 11, 2022
Nadtochiy A., Gordeev N., Kharchenko A. et al., Journal of Lightwave Technology 2021 Vol. 39 No. 23 P. 7479-7485
Modal absorptions in laser-like heterostructures containing
InAs self-assembled quantum dots (QDs) and InGaAs
quantum well-dots (QWDs) have been studied. The evaluation
of photoresponse as a function of waveguide length has allowed
us to determine per-layer modal absorptions of 69 and 13 cm-1
for the ground state optical transitions of QWDs and QDs, respectively.
The values of the modal absorption can be ...
Added: November 28, 2021
Zhukov A., Nadtochiy A., Kryzhanovskaya N. et al., Физика и техника полупроводников 2022 Т. 56 № 9 С. 922-927
The internal loss at the lasing threshold were studied
experimentally and numerically in laser cavities comprising dense
arrays of InGaAs/GaAs quantum dots (quantum well-dots) as
a function of the number of their planes and the output loss.
Numerical values of the parameters were found that determine the
free-carrier absorption in the active region and in the waveguiding
layer. The optimal design ...
Added: October 3, 2022
Han L., Wang Z., Gordeev N. et al., Micromachines 2023 Vol. 14 No. 6 Article 1271
Semiconductor lasers have developed rapidly with the steady growth of the global laser
market. The use of semiconductor laser diodes is currently considered to be the most advanced
option for achieving the optimal combination of efficiency, energy consumption, and cost parameters
of high-power solid-state and fiber lasers. In this work, an approach for optical mode engineering
in planar waveguides ...
Added: June 27, 2023
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 12 С. 1223-1228
The rate equations are used to analyze the characteristics
of a tandem consisting of a laser diode and a semiconductor
optical amplifier made of a single heterostructure with quantum
dots. The optimal value of the current distribution coefficient
the amplifier and the laser, as well as the optimal resonator
length that provides the highest output power of the tandem
were determined. ...
Added: November 25, 2021
Зубов Ф. И., Максимов М. В., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Makhov I., Бекман А. А., Кулагина М. М. et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40-43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
Seidelman T., Schimpf C., Bracht T. et al., Physical Review Letters 2022 Vol. 129 No. 19 Article 193604
Entangled photon pairs are key to many novel applications in quantum technologies. Semiconductor quantum dots can be used as sources of on-demand, highly entangled photons. The fidelity to a fixed maximally entangled state is limited by the excitonic fine-structure splitting. This work demonstrates that, even if this splitting is absent, the degree of entanglement cannot ...
Added: December 1, 2022
Zhukov A., Blokhin S., Maleev N. A. et al., Optics Express 2021 Vol. 29 No. 25 P. 40677-40686
p-i-n photodiodes comprising dense arrays of InGaAs quantum dots (referred to
as quantum well-dots) were fabricated, and the basic physical processes affecting their highspeed
performance were studied for the first time by measuring the frequency response under
illumination with photons absorbed either in the quantum well-dots (905-nm illumination) or
mainly in GaAs layers (860-nm illumination). A GaAs p-i-n photodiode ...
Added: November 23, 2021