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Лазеры и микролазеры на основе квантовых точек
СПб. :
ПОЛИТЕХ-ПРЕСС, 2019.
Priority areas:
engineering science
Language:
Russian
Zubov F. I., Shernyakov Y. M., Gordeev N. Y. et al., Quantum Electronics 2022 Vol. 52 No. 7 P. 593-596
Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated ...
Added: December 13, 2022
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10-13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Zhukov A., Moiseev E., Nadtochiy A. et al., Technical Physics Letters 2020 Vol. 46 P. 515-519
The operation speed of microdisk lasers with quantum dots working at room temperature without thermal stabilization has been experimentally examined, and the widest modulation bandwidth of microdisks with various diameters has been calculated. It was shown that taking into account the effect of self-heating of a microlaser at high bias currents, which is manifested in ...
Added: September 29, 2020
Maximov M., Nadtochiy A., Zhukov A., Laser Physics Letters 2020 Vol. 17 No. 9 P. 095801
We show that the density of states and gain spectra of InGaAs/GaAs quantum well-dot (QWD)
hybrid nanostructures qualitatively differ from that of quantum wells (QWs) and quantum dots.
In QWDs, the density of states does not increase to higher energies and ground-state lasing is
maintained up to shorter cavities (higher output loss) as compared to QW lasers emitting ...
Added: September 24, 2020
Nadtochiy A., Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 4 С. 42-45
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures
of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD
structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current
density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and
0.9 cm–1), respectively. ...
Added: March 16, 2021
Makhov I., Ivanov K., Moiseev E. et al., Optics Letters 2023 Vol. 48 No. 13 P. 3515-3518
The peculiarities of two-state lasing in a racetrack microlaser
with an InAs/GaAs quantum dot active region are
investigated by measuring the electroluminescence spectra
at various injection currents and temperatures. Unlike
edge-emitting and microdisk lasers, where two-state lasing
involves the ground and first excited-state optical transitions
of quantum dots, in racetrack microlasers, we observe lasing
through the ground and second excited states. As ...
Added: June 27, 2023
Nadtochiy A., Gordeev N., Kharchenko A. et al., Journal of Lightwave Technology 2021 Vol. 39 No. 23 P. 7479-7485
Modal absorptions in laser-like heterostructures containing
InAs self-assembled quantum dots (QDs) and InGaAs
quantum well-dots (QWDs) have been studied. The evaluation
of photoresponse as a function of waveguide length has allowed
us to determine per-layer modal absorptions of 69 and 13 cm-1
for the ground state optical transitions of QWDs and QDs, respectively.
The values of the modal absorption can be ...
Added: November 28, 2021
Максимов М. В., Шерняков Ю. М., Гордеев Н. Ю. et al., Письма в Журнал технической физики 2023 Т. 49 № 5 С. 18-21
We propose an approach for encoding and transmitting information based on the use of a quantum dot laser, which, depending on the injection current, emits either one of two or simultaneously two spectral components, with different wavelengths. When the laser is modulated by current, each lasing line is detected by an independent photodiode, and thus ...
Added: June 27, 2023
Zhukov A E, Optics Express 2018 Vol. 26 No. 11 P. 13985-13994
We report room temperature injection lasing in the yellow–orange
spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensilestrained
InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic
vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the
<111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier
insertions ...
Added: February 10, 2020
Zhukov A., Applied Physics B: Lasers and Optics 2018 Vol. 124 No. 2 Article 21
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, ...
Added: March 16, 2021
Nadtochiy A., Максимов М. В., Mintairov S. et al., Physica Status Solidi (B): Basic Research 2018 Vol. 255 No. 9 Article 1800123
Dense arrays of carrier localizing indium-rich regions (referred to as quantum
well-dots, QWDs) formed inside an indium-depleted residual quantum well
by metalorganic vapor phase epitaxial deposition of 4–16 monolayers (ML) of
InxGa1xAs (0.3<x<0.5) on 6 misoriented GaAs (100) substrates are
studied. It is shown that in addition to QWDs the deposited layers may
contain other objects with size and shape ...
Added: March 16, 2021
Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov et al., IEEE Photonics Technology Letters 2022 Vol. 34 No. 24 P. 1349-1352
We report on the fabrication and studies of
Ø100 μm half-disk lasers with an active region based on
InGaAs/GaAs quantum dots providing very high modal gain.
Such resonators support whispering gallery modes propagating
at the cavity periphery. The microlasers show directional light
outcoupling: continuous-wave output power emitted from the
flat side reaches 17 mW, which is about 7 times greater than
the ...
Added: December 13, 2022
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Light: Science and Applications 2021 Vol. 10 P. 1-11
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with ...
Added: April 19, 2021
Kryzhanovskaya N., Zhukov A., Moiseev E. et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for
creating compact, energy-efficient light sources (microlasers) for various applications owing to
their small footprints, high Q factors, planar geometry, in-plane light emission, and high
sensitivity to the environment. In this review we present the most recent advances in III–V
microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators
and discuss ...
Added: September 3, 2021
Fedor Zubov, Moiseev E., Mikhail Maximov et al., Photonics 2023 Vol. 10 No. 3 Article 290
We report on half-ring lasers that are 100–200 um in diameter and are fabricated by cleaving
the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the
same wafer are compared. The active area of the microlasers is based on the quantum heterostructures
of mixed (0D/2D) dimensionality, referred to as quantum well-dots with ...
Added: June 27, 2023
Demenev A. A., Kulakovskii V.D., Schneider C. et al., Applied Physics Letters 2016 Vol. 109 No. 17 P. 171106-1-171106-4
We report close to circularly polarized lasing at 1.473 and 1.522 eV from an AlAs/ AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities ...
Added: February 15, 2018
Kryzhanovskaya N., Zubov Fedor I., Moiseev E. et al., Laser Physics Letters 2022 Vol. 19 No. 1 Article 016201
Characteristics of a compact III–V optocoupler heterogeneously integrated on a silicon substrate
and formed by a 31 μm in diameter microdisk (MD) laser with a closely-spaced
50 μm × 200 μm waveguide photodetector are presented. Both optoelectronic devices were
fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers.
The measured dark current density of the photodetector was as ...
Added: December 2, 2021
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Khrebtov A. I., Kulagina A. S., Danilov V. V. et al., Journal of Optical Technology (A Translation of Opticheskii Zhurnal) 2022 Vol. 89 No. 5 P. 298-301
Subject of study. The dependence of the photoluminescence of a flexible film structure, which is an array of
InP/InAsP/InP nanowires incorporated into a polymerized trioctylphosphine oxide layer with CdSe/ZnS colloidal
quantum dots, on the intensity of excitation in the near-infrared range at room temperature was investigated
in this study.Method. Nanowires were synthesized on a Si (III) substrate by ...
Added: September 26, 2022
Zhukov A., Moiseev E., Nadtochiy A. et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active
region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: ...
Added: January 26, 2023