Directional single-mode emission from InGaAs/GaAs quantum-dot half-disk microlasers

IEEE Photonics Technology Letters. 2022. Vol. 34. No. 24. P. 1349–1352.

Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov, Vorobyev A., Mozharov A., Kalyuzhnyy N., Mintairov S., Kulagina M., Natalia V. Kryzhanovskaya, Alexey E. Zhukov

We report on the fabrication and studies of
Ø100 μm half-disk lasers with an active region based on
InGaAs/GaAs quantum dots providing very high modal gain.
Such resonators support whispering gallery modes propagating
at the cavity periphery. The microlasers show directional light
outcoupling: continuous-wave output power emitted from the
flat side reaches 17 mW, which is about 7 times greater than
the power emitted from the back semicircular side. Single-mode
lasing in a wide range of the injection currents is observed. P-side
down bonding of the devices onto Si-board allowed increasing the
maximum optical power to more than 30 mW and the lasing was
observed up to 93C. The 3 dB modulation bandwidth of 4.6 GHz
was measured likely being limited by RC-parasites.

Keywords: квантовые точки, quantum dots, microcavity, микрорезонатор, полупроводниковый лазер, microlaser, микролазеры, Diode laser

Publication based on the results of: Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)