Half-Ring Microlasers Based on InGaAs Quantum Well-Dots with High Material Gain

Photonics. 2023. Vol. 10. No. 3. Article 290.

Fedor Zubov, Moiseev E., Mikhail Maximov, Vorobyev A., Mozharov A., Shernyakov Y., Kalyuzhnyy N., Kryzhanovskaya N., Zhukov A.

We report on half-ring lasers that are 100–200 um in diameter and are fabricated by cleaving
the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the
same wafer are compared. The active area of the microlasers is based on the quantum heterostructures
of mixed (0D/2D) dimensionality, referred to as quantum well-dots with very high material gain.
Half-ring lasers show directional light emission and single-mode lasing near the threshold. A maximal
continuous-wave output power of 76 mW is achieved for a half-ring that is 200 um in diameter. Halfrings
demonstrate better wall-plug efficiency as compared to half-disks. Lasing in pulse mode is
observed up to 140 C, the characteristic temperature is 100–125 K, depending on the half-ring size.
P-side down bonding onto Si-board significantly improves power and temperature characteristics. In
CW mode, lasing is maintained up to 97 C, limited by active-area overheating.

Keywords: quantum dot, квантовые точки, microcavity, микрорезонатор, полупроводниковый лазер, Diode laser

Publication based on the results of: Investigation of the characteristics of micro- and nanolasers based on A3B5 semiconductor heterostructures of various quantum dimensions (2023)