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October 12, 2026
Road Injuries Leading Cause of Death Among Men Aged 10 to 39
Worldwide, road injuries are the leading cause of death among males aged 10–39. An international team of researchers reached this conclusion as part of the Global Burden of Disease Study 2023, analysing data from 204 countries between 1990 and 2023. Their findings have been published in The Lancet Public Health, with HSE University Professor Vasily Vlassov listed among the collaborators.
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The 23rd Annual Meeting of the Valdai Discussion Club was held from September 28 to October 1, 2026 under the theme ‘Responsibility for the Future: Limits of the Possible, or Limitless Possibilities?’ The forum brought together 120 experts from 40 countries, including representatives of China, the United States, India, Brazil, the United Kingdom, Germany, Egypt, Iran, and Japan.
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The HSE International Centre of Decision Choice and Analysis studies a wide range of methods for analysing decision-making and possible scenarios for the development of natural, socio-economic, and political phenomena using various mathematical models. The application of advanced mathematical methods to forecasting helps to prevent negative outcomes and avoid erroneous decisions. The HSE News Service spoke to the centre’s director, Prof. Fuad Aleskerov, about its work.

 

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Исследование характеристик и разработка моделей цифровых микросхем серии IN74AC04 с учетом низкоинтенсивного облучения

Гл. 2. С. 10–16.
Kharitonov I. A., Куликов Н. А., Zviagintsev D. V.
Language: Russian
Full text
Keywords: SPICE модельКМОП и БиКМОП интегральные схемынизкоинтенсивное излучение

In book

Вопросы атомной науки и техники. Серия: Физика радиационного воздействия на радиоэлектронную аппаратуру
Вопросы атомной науки и техники. Серия: Физика радиационного воздействия на радиоэлектронную аппаратуру
Лыткарино МО: АО "НИИП", 2020.
Similar publications
Измерение и моделирование влияния низкоинтенсивного излучения на цифровые КМОП ИС
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020
Компактные SPICE-модели элементов КМОП и БиКМОП СБИС, работающих в экстремальных условиях
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 402–403
The paper presents a library of radiation and electrothermal BJT and MOSFET VLSI SPICE models. The library contains models for MOSFET, SOI/SOS MOSFET, Si BJT, SeGe HBT taking into account self-heating, high (up to +300°C) and low (up to –200°C) temperatures, the influence of radiation (neutrons, electrons, γ- and X-ray, protons, pulsed radiation, single particles). ...
Added: January 30, 2019
An Efficient Approach to Simulation of Radiation Effects in bipolar and MOSFET IC’s using Non-Specialized SPICE Simulators
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in: 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017).: Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1–3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Учёт влияния импульсного ионизирующего воздействия в SPICE-моделях биполярных транзисторов и диодов
Petrosyants K. O., Sambursky L. M., Kharitonov I. A. et al., В кн.: Твердотельная электроника. Сложные функциональные блоки РЭА. Материалы XIV научно-технической конференции Москва, 7-9 октября 2015 г.: М.: ОАО НПП «ПУЛЬСАР», 2015. С. 239–243.
В данной работе предлагаются уточненные, но достаточно простые SPICE модели импульсных фототоков для диодов и биполярных транзисторов. Модели имеют единую структуру, учитывают электрическое смещение на p-n-переходе, особенности формы отклика конкретного полупроводникового прибора. Параметры моделей определяются из результатов испытаний на моделирующих установках. ...
Added: February 16, 2016
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