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Исследование влияние температуры на устойчивость КМОП КНИ ячеек памяти к воздействию одиночных тяжелых частиц
С. 4–6.
In book
Т. 3. Вып. III. , CreateSpace, 2014.
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov, , in: Proceedings of the Future Technologies Conference (FTC) 2024, Volume 3. (LNNS, volume 1156).: Switzerland: Springer, 2024. P. 643–652.
Added: November 6, 2025
Petrosyants K. O., Silkin D. S., D. A. Popov et al., Russian Microelectronics 2024 Vol. 53 No. 7 P. 737–743
With a decrease in the size of transistors, the conditions arise when the impact of one particle affects several transistors in the composition of a memory cell. Therefore, during simulation it is not sufficient to take into account one transistor directly hit by a particle. In this study, a full-size 3D model of two n-channel transistors ...
Added: November 6, 2025
Максименко Ю. Н., Petrosyants K. O., Силкин Д. С. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 6 С. 772–786
Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices ...
Added: February 14, 2025
Petrosyants K. O., Kharitonov I. A., Силкин Д. С. et al., Наноиндустрия 2024 Т. 17 № S10-1(128) С. 302–312
The paper considers qualitative estimations of CMOS SRAM Cells sensitivity to SEU performed for technological nodes varying from 90 nm up to 28 nm using verified TCAD-SPICE software tools and models. The process and results of simulations have been presented. The estimations of CMOS SRAM cells hardness to SEU have been confirmed using SRAM measurement ...
Added: September 3, 2024
Petrosyants K. O., Силкин Д. С., Popov D. et al., Известия высших учебных заведений. Электроника 2023 Т. 28 № 6 С. 826–837
С уменьшением размеров транзисторов возникают условия, когда удар одной частицы затрагивает сразу несколько транзисторов в составе ячейки памяти. Вследствие этого при моделировании недостаточно учитывать один транзистор, в который непосредственно попадает частица. В работе рассмотрена полноразмерная 3D-модель двух n-канальных транзисторов, являющихся частью 6T-ячейки памяти, в которую ударяет заряженная частица. Предложен способ моделирования удара частицы, который позволяет ...
Added: January 11, 2024
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
K.O. Petrosyants, D.S. Silkin, D.A. Popov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–4.
Added: July 13, 2022
Petrosyants K., D.A. Popov, Li B. et al., , in: Proceedings of the 3nd International Conference on Microelectronic Devices and Technologies (MicDAT 2020).: Barcelona: International Frequency Sensor Association (IFSA), 2020. Ch. 15 P. 31–34.
The simulation results received by mixed TCAD-SPICE modeling for linear energy transfer (LET), transient characteristics of voltages and currents in 0.24 um SRAM cells with SOI, DSOI and SELBOX structures in temperature range up to 300 °C were analyzed. It was shown that the fault tolerance of CMOS SOI SRAM cells can be increased when ...
Added: March 23, 2021
Popov D., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 227–229.
A mixed TCAD-SPICE simulation of the heavy ion impact into a SRAM on SOI CMOS transistors was carried out. The dependence of the threshold LET on temperature was investigated for three configurations of 0.24 μm SOI MOSFET: traditional SOI, Selective BOX and Double SOI. The radiation hardness of SRAM on Double SOI MOSFETs is significantly ...
Added: December 5, 2020
K. O. Petrosyants, D. A. Popov, M. R. Ismail-Zade et al., , in: Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС-2020).Вып. 4.: ИППМ РАН, 2020. P. 2–8.
Two types of the MOSFET models available in commercial versions of TCAD and SPICE simulators are completed with additional equations taking into account radiation effects. The adequacy of the models is demonstrated on two examples 1) 0.2 um and 0.24 um SOI/DSOI MOSFETs considering TID effects and single heavy ion impact, and 2) 28 nm bulk MOSFET, 45 nm and 28 nm ...
Added: December 5, 2020
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467–469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB ...
Added: March 24, 2020
Petrosyants K. O., Popov D., В кн.: XVIII Научно-техническая конференция «Электроника, микро- и наноэлектроника»: 24 - 27 июня 2019 года, г. Суздаль, Россия.: НИИСИ РАН, 2019. С. 27–28.
В работе рассматривается использование конструкций КНИ МОПТ с неравномерным легированием канала. С помощью Sentaurus TCAD промоделированы ВАХ КНИ МОПТ с однородным и неравномерным легированием канала (до 50% длины канала), а также зависимость времени задержки КМОП схем на основе исследуемых транзисторов. ...
Added: March 15, 2020
Adonin A. S., Petrosyants K. O., Popov D., , in: Proceedings of SPIE 11022. International Conference on Micro- and Nano-Electronics 2018Vol. 11022G.: SPIE, 2019. P. 1–6.
New SOS MOSFET design with the presence of high-resistance undoped silicon of intrinsic conductivity in the channel
region near the source was proposed. 0.75 μm SOS MOSFET with the use of an "insertion" makes it possible to obtain
the transistor with characteristics corresponding to a transistor with 0.5 μm topological channel length. This allows the
factories to produce ...
Added: November 30, 2019
Petrosyants K. O., Kharitonov I. A., Pugachev A. et al., Journal of Physics: Conference Series 2019 Vol. 1353 No. 1 P. 1–7
The complete analysis of I-V characteristics and set of basical parameters (Voc, Jsc, Idark, Pmax, η) for betavoltaic silicon batteries under Nickel-63 irradiation in temperature range 213-330 K is carried out using universal physical TCAD model. The standard TCAD optical generation model was adopted for simulation of electron-hole generation for beta particles irradiation. The pn-junction ...
Added: June 10, 2019
Petrosyants K. O., Popov D., , in: Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019).: Barcelona: International Frequency Sensor Association (IFSA), 2019. P. 24–28.
In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others ...
Added: June 4, 2019