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September 30, 2026
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The International Laboratory for Supercomputer Atomistic Modelling and Multi-Scale Analysis at HSE University held a major conference on molecular dynamics. Participants had the opportunity to attend all the presentations, while speakers were given as much time as they needed to answer questions. The HSE News Service interviewed Grigory Smirnov, Head of the Laboratory, and Genri Norman, Chief Research Fellow, about the conference preparations and the discussions it generated.
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?

Modeling of the Submicron MOSFETs Characteristics for UTSi Technology

P. 1–6.
Adonin A. S., Petrosyants K. O., Popov D.

New SOS MOSFET design with the presence of high-resistance undoped silicon of intrinsic conductivity in the channel
region near the source was proposed. 0.75 μm SOS MOSFET with the use of an "insertion" makes it possible to obtain
the transistor with characteristics corresponding to a transistor with 0.5 μm topological channel length. This allows the
factories to produce new competitive products without significant capital expenditures for the modernization of
production capacities.

Language: English
Full text
DOI
Text on another site
Keywords: CMOS SOI/SOSтехнология «кремний на сапфире»asymmetric dopingMOSFET performanceасимметричное легированиебыстродействие МОП
Publication based on the results of:
Integrated multiphysical simulation of basic designs and technologies of a new generation of microminiature, micropower semiconductor photo and beta voltaic batteries and sensors with a long service life for autonomous medical and technical systems for various purposes (2019)

In book

Proceedings of SPIE 11022. International Conference on Micro- and Nano-Electronics 2018
Vol. 11022G. , SPIE, 2019.
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