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Compact Power BJT and MOSFET models parameter extraction with account for thermal effects

P. 271–274.
Kharitonov I. A.

The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented. For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with transistor temperature.

Language: English
Full text
Keywords: power BJTpower MOSFETthermal effectselectro-thermal effectsselfheatingmodel parameter extractionSPICEVBIC modelмощные МОП транзисторымощные биполярные транзисторытепловые эффектысаморазогревопределение параметров моделейVBIC модельдополнительный генератор тока

In book

Proceedings of IEEE East-West Design & Test Symposium (EWDTS’11)
Proceedings of IEEE East-West Design & Test Symposium (EWDTS’11)
Kharkov: Kharkov national university of radioelectronics, 2011.
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