• A
  • A
  • A
  • ABC
  • ABC
  • ABC
  • А
  • А
  • А
  • А
  • А
Regular version of the site

Book chapter

Compact Power BJT and MOSFET models parameter extraction with account for thermal effects

P. 271-274.

The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented. For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with transistor temperature.

In book

Compact Power BJT and MOSFET models parameter extraction with account for thermal effects
Edited by: В. Хаханов. Kharkov: Kharkov national university of radioelectronics, 2011.