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Regular version of the site

Book chapter

SPICE Modeling of Small-Size Bulk, SOI and SOS MOSFETs at Deep-Cryogenic Temperatures

P. 97-103.
Ismail-zade M. R., Petrosyants K. O., Sambursky L. M., Zhang X., Li B., Luo J., Han Z.

A set of modified compact SPICE models of various flavours of MOSFETs (fabricated by bulk, SOI and SOS technologies) is presented for circuit simulation in the deep-cryogenic temperature range down to 4 K, which is important for space applications and development of scalable quantum computers. All models are constructed using the approach combining macromodeling based on the standard models available in the library of SPICE models and introducing smooth analytical functions continuous with temperature for the model parameters. A unified automated procedure for model parameter extraction is presented for all the models, providing an acceptable accuracy of accounting for electrical and temperature effects for practical applications in the temperature range from room temperature to 4 K.