Введение в TCAD и SPICE моделирование полупроводниковых приборов и элементов БИС
Conventional BJT, MOSFET, JFET, DMOST, IGBT structures fabricated on bulk silicon and SOI/SOS substrates are characterized as the object of modeling. Popular TCAD simulators and SPICE device models libraries are presented. The model parameters extraction strategies for TCAD device and SPICE circuit simulation based on data proceeding of physical and electrical measurements are described. The typical examples of TCAD and SPICE modeling of BJTs and MOSFETs fabricated by conventional silicon 1С technologies are presented.