TCAD-SPICE Two Level Simulation of Si BJTs and SiGe HBTs Taking into Account Radiation Effects
Novel TCAD and SPICE models of the Si BJTs and the SiGe HBTs taking into account influence of neutrons, protons, and gamma radiation on the device characteristics were developed. The interaction between TCAD and SPICE device models in radiation-hardened IC design flow was considered. The complete set of I-V, C-V, fT, fmax of BJT/HBT characteristics before and after irradiation was simulated by TCAD and used as input data for SPICE device model parameters extraction. The simulated characteristics compared with experimental data for Si and SiGe bipolar transistors before and after irradiation have shown 10-20% error in a wide range of fluxes and doses.