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May 14, 2026
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Оценка влияния параметров структуры FinFET на электрические характеристики средствами TCAD-моделирования

С. 120–123.
Petrosyants K. O., Силкин Д. С., Popov D.

In this work, the influence of changes in the FinFET structure parameters, such as the dimensions of the gate stack layers, the shape of the fin or doping levels, on the electrical characteristics of the device is investigated with the TCAD modeling.

Language: Russian
Full text
DOI
Keywords: TCAD simulationTCAD-моделированиеFinFETFinFETstructure parametersпараметры структуры

In book

Математическое моделирование в материаловедении электронных компонентов МММЭК–2021
М.: МАКС Пресс, 2021.
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