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Regular version of the site

Book chapter

An Efficient Approach to Simulation of Radiation Effects in bipolar and MOSFET IC’s using Non-Specialized SPICE Simulators

P. 1-3.

An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D.

In book

An Efficient Approach to Simulation of Radiation Effects in bipolar and MOSFET IC’s using Non-Specialized SPICE Simulators
Jinshun B. Institute of Microelectronics of Chinese Academy of Sciences, 2017.