Simulation of CMOS IC’s Waveforms Distortions in PCB Traces with Account for Radiation Effects
It is shown that it is necessary to take into account the radiation influence on CMOS IC’s characteristics in the process of waveforms distortions analysis in satellite communication PCB traces. The special SPICE models for CMOS transistors with radiation dependent model parameters were used for this purpose. The simulation results showed that total dose results to reducing of IC output current, increasing of IC output voltage rise/fall times and to reduction of parasitic oscillations in PCB traces. The influence of irradiated P- channel MOSFET on transient characteristics is more important than N-MOSFET’s influence because of summarized mobility reduction and threshold voltage value increasing.