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Simulation of CMOS IC’s Waveforms Distortions in PCB Traces with Account for Radiation Effects
P. 1-4.
It is shown that it is necessary to take into account the radiation influence on CMOS IC’s characteristics in the process of waveforms distortions analysis in satellite communication PCB traces. The special SPICE models for CMOS transistors with radiation dependent model parameters were used for this purpose. The simulation results showed that total dose results to reducing of IC output current, increasing of IC output voltage rise/fall times and to reduction of parasitic oscillations in PCB traces. The influence of irradiated P- channel MOSFET on transient characteristics is more important than N-MOSFET’s influence because of summarized mobility reduction and threshold voltage value increasing.
In book
Beograd : IEEE Region 8, Telekom Srbija a.d., 2016
Petrosyants K. O., Kharitonov I. A., Sambursky L. M., , in : Book of Abstracts of the 3rd International Conference on Advanced Measurement and Test , Xiamen, China, March 13-14, 2013. : Xiamen : [б.и.], 2013. P. 35-36.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. ...
Added: April 29, 2013
Petrosyants K. O., Kharitonov I. A., , in : Proceedings 16th Euromicro Conference on Digital System Design DSD 2013 Proceedings of the 16th Euromicro Conference on Digital System Design (DSD 2013) Santander, Spain. : Santander : IEEE Computer Society Conference Publishing Services (CPS), 2013. P. 479-482.
A method of account for radiation effects (total dose and particle fluence) in signal integrity analysis of digital system by using IBIS model is presented. It is shown that account for these effects in IBIS models can be performed by correction the input impedances of protection circuits (GND_Clamp and POWER_Clamp), output MOSFETs (PULL_UP, PULL_DOWN) characteristics ...
Added: October 15, 2013
Petrosyants K. O., Kharitonov I. A., Rjabov N., Advanced Materials Research 2014 Vol. 918 P. 191-194
An efficient methodology of electro-thermal design of smart power semiconductor
devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for
2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and
high power elements, temperature sensors, IC chips simulation are considered ...
Added: October 17, 2014
Piscataway : Institute of Electrical and Electronic Engineers, 2015
The RADECS conference and workshops address technical issues related to radiation effects on devices, integrated circuits, sensors, and systems, as well as radiation hardening, testing, and environmental modeling methods. Papers from the events are published in a biennial issue of the IEEE Transactions on Nuclear Science journal.
Presented papers describe significant new findings in the ...
Added: February 16, 2016
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Petrosyants K. O., Kozhukhov M., В кн. : Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г. : М. : МАКС Пресс, 2020. С. 394-397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Petrosyants K. O., Kharitonov I. A., Sambursky L. M., Advanced Materials Research 2013 Vol. 718–720 P. 750-755
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures ...
Added: January 23, 2014
Петросянц К. О., Козынко П. А., Рябов Н. И. et al., М. : Солон-Пресс, 2017
Рассмотрены принципы работы и электрические характеристики биполярных и МОП-транзисторов интегральных схем, базовых элементов цифровой и аналоговой схемотехники, БМК и ПЛМ, микроконтроллеров и микропроцессоров. Описаны методики выполнения лабораторных, расчетных на ЭВМ, курсовых, самостоятельных и др. работ. Пособие предназначено для бакалавров и магистров различных специальностей, изучающих электронику, микроэлектронику и схемотехнику; отдельные разделы могут быть полезными для аспирантов ...
Added: February 28, 2017
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., , in : Proceedings of the 24th European conference on radiation and its effects on components and systems -2015 (RADECS 2015), Moscow, Russia, 14-18 September. : Piscataway : Institute of Electrical and Electronic Engineers, 2015. P. 23-26.
Added: February 16, 2016
Kharitonov I. A., Popov D., Рахматуллин Б. А., Наноиндустрия 2020 Т. 13 № S5-2 С. 379-385
The paper deals with SPICE models of varying complexity for analyzing the heavy (nuclear) particles impact on CMOS circuits. For the version of the model that takes into account the influence of the electric bias on the parameters of the current pulse, expressions have been given for evaluating the main model parameters, depending on the ...
Added: April 16, 2021
Konstantinov Y., Горланов Е. С., Pozhidaev E. et al., Системный администратор 2018 № 9 С. 84-89
Computer simulation for the impact of electrostatic discharges (ESD) on the power IRF series MOS transistors have been carried out. The influence of the printed circuit board (PCB) capacitance values on the transistor gate-source voltage is investigated. This influence is significant for transistors with low gate – source capacitance was found.
The relation between the ESD ...
Added: October 10, 2018
Smirnova D., Kuksin A., Starikov S. et al., Modelling and Simulation in Materials Science and Engineering 2013 Vol. 21 No. 035011 P. 1-24
A new interatomic potential for a uranium–molybdenum system with xenon is developed in the framework of an embedded atom model using a force matching technique and a dataset of ab initio atomic forces. The verification of the potential proves that it is suitable for the investigation of various compounds existing in the system as well ...
Added: March 19, 2014
Abrameshin D., Tumkovskiy S., Pozhidaev E., , in : 2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings. : M. : IEEE, 2018. P. 1-4.
In operation results of computer simulation of characteristics of the standard analog device - the heterodyne executed on the printed circuit board from the composite dielectric having feeble conductivity are explained. Results of simulation showed that increase in specific bulk conductivity of material of the printed circuit board to 2·10 -7 Ohm -1 -m -1 practically does not change operating characteristics ...
Added: July 31, 2018
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., , in : Proceedings of IEEE East-West Design & Test Symposium (EWDTS’12). : Kharkov : Kharkov national university of radioelectronics, 2012. P. 60-65.
An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static ...
Added: January 22, 2013
Kharitonov I. A., , in : Science in the modern information society IV: Proceedings of the Conference. Vol. 2.: North Charleston : CreateSpace, 2015. P. 119-121.
The unified SPICE model for MOS FET on insulating substrate with account for the selfheating effects. transistors interaction and thermal properties of chip construction and mounting is presented. The MOS FET model parameters depend on transistor internal temperature which is calculated using thermal network . Any model of MOS FET can be used. Thermal network ...
Added: February 15, 2016
Ivanov F., Krouk E., Kreshchuk A., , in : 2019 XVI International Symposium "Problems of Redundancy in Information and Control Systems" (REDUNDANCY). : IEEE, 2019. P. 133-138.
Added: March 17, 2020
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183-194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
Petrosyants K. O., Kozhukhov M., , in : Proceedings of IEEE East-West Design & Test Symposium (EWDTS’12). : Kharkov : Kharkov national university of radioelectronics, 2012. P. 274-277.
The effects of proton irradiation on SiGe heterojunction bipolar transistor (HBT) are investigated using Synopsys/ISE TCAD tool. To account for the impact of proton irradiation models for carrier lifetime degradation under irradiation are included in the program. The results of modeling the impact of protons of different energies are presented. For SiGe HBT increase in ...
Added: October 21, 2012
Kechiev L., Шатов Д. С., Технологии электромагнитной совместимости 2014 № 3(50) С. 36-44
In article features of designing of the distributed power supply system are considered, modelling of untying condensers as a part of distributed to the power supply system is spent, the approach to construction of the distributed power supply system is described ...
Added: October 1, 2014
Альбатша А. М., В кн. : Информационные технологии в науке, бизнесе и образовании: сборник трудов X Международной научно-практической конференции студентов, аспирантов и молодых ученых. : М. : Московский государственный лингвистический университет, 2018. С. 11-15.
The aim of this study is to give a brief overview of contemporary approaches (i.e., design/hardware obfuscation techniques) to protecting design (hardware) from various security threats - reverse engineering, IP piracy, tampering. The paper explains the notion ‘design obfuscation' and describes several existing technical solutions for design obfuscation as based on the analysis of academic ...
Added: December 6, 2019
Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., , in : 2016 International Siberian Conference on Control and Communications (SIBCON). Proceedings. : M. : HSE, 2016. P. 1-4.
The paper describes the features of an automated system for measurement and processing of electrical characteristics of BJTs and MOS transistors in the presence of thermal and radiation effects. Automation is made possible with employing of long measurement cables and a ramified scripting system. The system is based on a set of measuring instruments, methods ...
Added: September 28, 2016
Petrosyants K. O., Popov D., Bykov D., Известия высших учебных заведений. Электроника 2017 Т. 22 № 6 С. 569-581
В работе моделируется воздействие ионизирующего излучения на 45 нм МОП-транзисторы с high-k диэлектриком, изготовленные по технологии на объёмном кремнии и диэлектрической подложке. Разработан и введен набор новых полуэмпирических моделей, учитывающих деградацию радиационно-зависимых параметров от воздействия ионизирующего излучения: подвижность, время жизни, зависимость плотности заряда в объеме SiO2 и HfO2 и на границах HfO2/Si от дозы ионизирующего излучения. ...
Added: October 16, 2017