The effect of elevated temperature on the pattern of current transients and the hole mobility in polycarbonate doped with 20 and 30 wt % aromatic hydrazone was studied. With the use of homogeneous carrier generation mode, it was found that the shape of the current transient varies with an increase in the temperature in qualitative agreement with the prediction of the multiple_trapping theory with the exponential trap energy distribution. The apparent activation energy of hole mobility is 0.41 eV in the classical measurement mode and 0.55 eV in the case of homogeneous irradiation.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.