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Моделирование радиационно-стимулированного тиристорного эффекта в инверторе, выполненном по КМОП-технологии
С. 97–98.
Publication based on the results of:
Зубкова А. И., Kharitonov I. A., Наноиндустрия 2025 Т. 18 № S11-2(135) С. 871–879
The paper considers electrothermal simulation of MOSFET power circuits realized using Python Spice software. Besides, it presents an algorithm for accelerating the process of electro-thermal characteristics estimation for power circuits using Python software, as well as the results of electro-thermal calculations with the accelerated process features and with conventional electro-thermal SPICE simulations for two power ...
Added: November 5, 2025
Popov D., Жаров Е. Е., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 707–709
В работе рассматривается возможность применения методов машинного обучения для моделирования вольт-амперных характеристик МОП-транзистора. Приведено обоснование замены приборно-технологического моделирования на модели полупроводниковых компонентов на базе нейронных сетей (ML-TCAD). Для иллюстрации подхода разработана модель для 130-нм МОП-транзистора и проведен расчет входных вольт-амперных характеристик (ВАХ). ...
Added: April 13, 2025
Зубкова А. И., Kharitonov I. A., Наноиндустрия 2024 Т. 17 № S10-2(128) С. 745–751
The study presents the Python program which implements digital twins for powerful MOSFET transistors. The program possibilities, structure, interface have been described and demonstrated. The examples of program generated MOSFET characteristics have been presented for domestic power MOSFET transistors 2P829D and 2P782G1. ...
Added: September 3, 2024
Petrosyants K. O., Kharitonov I. A., Тегин М. С., Известия высших учебных заведений. Электроника 2024 Т. 29 № 1 С. 65–78
Большие скачки температуры в структурах мощных полупроводниковых приборов при их включении и выключении существенно снижают надежность работы силовых схем. Широко используемые маршруты электротеплового моделирования тепловых схем имеют ряд недостатков: использование взаимосвязанных Spice-симуляторов электрических цепей и пакета 3D численного моделирования тепловых полей требует детального описания 3D-конструкций и больших затрат компьютерного времени; использование только Spice-подобных симуляторов электрических ...
Added: May 7, 2024
Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 4.: М.: ИППМ РАН, 2021. Гл. 86 С. 2–6.
Added: October 31, 2021
Wang Y., Liu F., Li B. et al., IEEE Transactions on Nuclear Science 2021 Vol. 68 No. 8 P. 1660–1667
The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- μm double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a DSOI static random access memory (SRAM). The physical mechanism of single-event effect ...
Added: September 26, 2021
Ismail-zade M. R., Petrosyants K. O., Sambursky L. M. et al., , in: 2020 26th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).: IEEE, 2020. P. 97–103.
A set of modified compact SPICE models of various flavours of MOSFETs (fabricated by bulk, SOI and SOS technologies) is presented for circuit simulation in the deep-cryogenic temperature range down to 4 K, which is important for space applications and development of scalable quantum computers. All models are constructed using the approach combining macromodeling based ...
Added: June 5, 2021
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467–469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB ...
Added: March 24, 2020
Popov D., В кн.: Международный форум «Микроэлектроника-2019». Школа молодых ученых. Сборник тезисов. Республика Крым, 23-25 сентября 2019 г.: М.: ООО "Спектр", 2019. С. 270–277.
Разработана TCAD RAD-THERM библиотека физических моделей, учитывающих воздействие радиационных (нейтронного, протонного и гамма излучения) и температурных (зависимость коэффициента теплопроводности от температуры, легирования и толщины слоя кремния) эффектов. Результаты моделирования согласуются с экспериментальными данными, погрешность не превышает 15%-20%. ...
Added: November 19, 2019
Andreev D. V., Bondarenko G.G., Andreev V. V. et al., Acta Physica Polonica A 2019 Vol. 36 No. 2 P. 263–266
The paper considers an influence of different kinds of radio-frequency plasma treatments onto modification
of MIS structures with a thermal SiO2 film which is aimed at improvement of electro-physical parameters of
the film. It was found that for the modification of MIS structures it is more preferable to utilize the oxygen
plasma radio-frequency plasma treatment performed by a ...
Added: November 5, 2019
Petrosyants K. O., Popov D., , in: Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019).: Barcelona: International Frequency Sensor Association (IFSA), 2019. P. 24–28.
In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others ...
Added: June 4, 2019
Petrosyants K. O., Kozhukhov M., Popov D., , in: 2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS).: Cluj: IEEE, 2019. P. 1–4.
A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled ...
Added: May 31, 2019
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404–405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 402–403
The paper presents a library of radiation and electrothermal BJT and MOSFET VLSI SPICE models. The library contains models for MOSFET, SOI/SOS MOSFET, Si BJT, SeGe HBT taking into account self-heating, high (up to +300°C) and low (up to –200°C) temperatures, the influence of radiation (neutrons, electrons, γ- and X-ray, protons, pulsed radiation, single particles). ...
Added: January 30, 2019
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42–45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Petrosyants K. O., , in: 24th International Workshop on Thermal Investigations of ICs and Systems (2018).: IEEE, 2018. P. 1–6.
The temperature range of SPICE models of bipolar and MOS transistors is extended from –60°C to +150°C (standard commercial level) to –200°C…+300°C for low/high temperature ICs design. This is done by including additional equations for temperature-dependent parameters, and by connecting additional elements to the device equivalent circuit to take into account the thermal effects. The ...
Added: November 22, 2018
М.: НИИСИ РАН, 2018.
Сборник содержит программу и тезисы докладов 17-ой Всероссийской научно-технической конференции «Электроника, микро- и наноэлектроника», проводимой в г. Суздаль с 14 по 18 мая 2018 года Федеральным государственным учреждением «Федеральный научный центр Научно-исследовательский институт системных исследований Российской Академии наук», а также ООО «Галактический поток», при поддержке Российского Фонда Фундаментальных Исследований (Грант РФФИ № 18-07-20020).
Представленные тезисы отражают широкую панораму деятельности сотрудников ...
Added: November 7, 2018
Petrosyants K.O., Kharitonov I.A., , in: Proceedings of IEEE East-West Design & Test Symposium (EWDTS'2018).: IEEE Computer Society, 2018. P. 760–765.
An extended version of MOSFET RAD SPICE model providing combined account for aging and total dose effects is described. The model uses summation of radiation induced (depending on dose rate, irradiation time, electrical bias) oxide and interface traps densities and interface densities produced by hot electrons to calculate MOSFET characteristics. The model was built using ...
Added: October 30, 2018