The effects of neutron irradiation on both Si bipolar junction transistor (BJT) and SiGe heterojunction transistor (HBT) are investigated using Synopsys/ISE TCAD tool. For this purpose the carrier lifetime degradation under irradiation models are included in the program. It was established that at fluence 4×1013 cm-2 the Si BJT exhibited a degradation in current gain of 50% for high level and 80% for low level of E-B junction injection. For SiGe HBT at fluences as high as 1015 cm-2 the degradation of peak current gain is less than 40%, and the device maintains a peak current gain of 80 – 100 after 1015 cm-2. The cut-off and maximum oscillations frequencies are small sensitive to neutron irradiation. The simulation results are in good agreement with experimental data.
The structure of experimentally designed solar cells was optimized in terms of the photoactive layer thickness for both organic bulk heterojunction and hybrid perovskite solar cells. The photoactive layer thickness had a totally different behavior on the performance of the organic and hybrid solar cells. Analysis of the optical parameters using transfer matrix modeling within the Maxwell–Garnett effective refractive index model shows that light absorbance and exciton generation rate in the photoactive layer can be used to optimize the thickness range of the photoactive layer. Complete agreement between experimental and simulated data for solar cells with photoactive materials that have very different natures proves the validity of the proposed modeling method. The proposed simple method which is not time-consuming to implement permits to obtain a preliminary assessment of the reasonable range of layer thickness that will be needed for designing experimental samples.