Приборы сверхвысоких частот и оптического диапазона в вопросах и ответах
The main content of the training manual is:consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors, Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients), the effect of nuclear reactions and fast annealing on the parameters of transistors is considered; Classification of radiation effects in bipolar transistors is given.
The special library of radiation damage models for physical parameters and electrical characteristics of bipolar and MOS transistor and sensor structures taking into account neutron, gamma and proton irradiation is developed and built-into Sentaurus Synopsys software tool. For different BJTs/HBTs, MOSFETs and radiation sensors the good agreement to simulated and experimental electrical characteristics is achieved. The RMS error is not more than 10-20%.
The effects of neutron irradiation on both Si bipolar junction transistor (BJT) and SiGe heterojunction transistor (HBT) are investigated using Synopsys TCAD tool. The carrier lifetime degradation under irradiation models are included in the program. For SiGe HBT at fluences as high as 10**15 cm-2 the degradation of peak current gain is less than 40%, and the device maintains a peak current gain of 80 100 after 10**15 cm-2. The simulation results are in good agreement with experimental data.
We report on the inﬂuence of the lateral electric ﬁeld on the charge mobility in organic ﬁeld-effect transistors (OFET) based on C 60 ﬁlms with multigrain morphology. The experimental data were quantitatively described using a recent analytical model by accounting for the strong local electric ﬁelds in a multigrain transistor channel and for the energy correlation effects. To rationalize the presence of a correlated disorder in a non-polar C 60 material, we show that randomly oriented permanent dipoles in organic gate dielectric layers can generate a signiﬁcant dipolar disorder in an adjacent nonpolar semiconductor layer.