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Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE
Journal of Physics: Conference Series. 2021. Vol. 2086. Article 012013.
Gridchin V. O., Dragunova A., Kotlyar K. P., Reznik R. R., Komarov S.D., Kryzhanovskaya N., Soshnikov I. P., Samsonenko Y. B., Cirlin G. E.
The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such as nanoumbrellas. The separated NWs exhibit a photoluminescence spectrum with maxima at about 590 nm, whereas the nano-umbrellas show two pronounced photoluminescence lines at 421 and 619 nm.
Dmitriev A., Kornilov V., Batienkov R., Lecture Notes in Civil Engineering 2026 Vol. 886 P. 249–255
Numerous studies have provided compelling evidence that the probability distribution of avalanche sizes follows a power law, and that 1/f noise is present in the stochastic dynamics of landslides. We present a theoretical explanation of these phenomena within the framework of self-organized criticality theory, proposing a discrete-time model in the form of a sandpile cellular ...
Added: October 13, 2026
Dmitriev A., Shulman I., Lebedev A., Studies in Computational Intelligence 2026 Vol. 1265 P. 266–273
A discrete-time model is presented for the self-organization of the X/Twitter social network to the edge of a phase transition, characterized by avalanche-like propagation of information in the network. The model is based on the analogy between the critical dynamics of the X social network and sandpile cellular automata with Manna rule on the Chung-Lu ...
Added: October 13, 2026
Arutyunov K., Kharitonov I. A., Petrosyants K. O., JETP Letters 2026 Vol. 124 No. 6 P. 1–16
Superconducting properties of metallic micro- and nanowires can be entirely different from those of bulk superconductors. Of particular interest is the nonequilibrium current-induced state of a quasi-one-dimensional superconducting channel. The most interesting phenomenon here is the stepped I–V characteristic, explained by a process known as phase slip center activation. If the origin of such step-like ...
Added: October 13, 2026
Makarov D. M., Kalikin N., Fashchevsky K. A. et al., Electrochimica Acta 2026 Vol. 579 Article 150159
Machine learning (ML) has become a powerful tool for accelerating the development of carbon-based supercapacitors;
however, most published models assume that a single predictive framework can describe both conventional
porous carbons and hybrid carbon electrodes. Here, we test this assumption using a comprehensive
benchmark dataset and an extended literature-curated dataset enriched with synthesis- and electrolyte-related
descriptors. Three ML algorithms ...
Added: October 13, 2026
Махлуф М., Ozhegov R., Elezov M. et al., Фотоника 2026 Vol. 20 No. 6 P. 414–423
This paper compares the ranging precision of direct time-of-flight (dToF) and non-line-of-sight (NLOS) LiDAR architectures, both using a superconducting nanowire single-photon detector (SNSPD). Both systems operate at 1550 nm with a 50 ps pulsed laser and time-correlated single-photon counting (TCSPC). The dToF configuration achieved approximately 100 µm precision at 10 m, while the NLOS configuration achieved 500 µm precision for ...
Added: October 12, 2026
Singapore: Springer, 2026.
This volume presents the Proceedings of the 34th IUPAP Conference on Computational Physics (CCP2023), held in Kobe, Japan on August 4–8, 2023. It offers a collection of peer-reviewed articles that highlight recent developments in computational and simulation research across various areas of physics. Key topics include the use of data science, quantum computing, and machine ...
Added: October 12, 2026
Goncharov A., Chibisov A., Advanced Theory and Simulations 2023 Vol. 12 No. 13 Article 2200816
Designing stable quantum computers with the ability to correct errors responsibly requires a detailed understanding of the physical processes that underlie these devices. In this study, detailed quantum mechanical simulations of the atomic structure, charge distribution of electron density, and distribution and orientation of magnetic and quantum states as a function of applied external pressure ...
Added: October 11, 2026
Chibisov A., Gnidenko A., Chibisova M. et al., FlatChem 2023 Vol. 41 Article 100533
Manufacturing precise quantum computers with small errors in quantum operations, long coherence times, and low power consumption is the most important challenge in modern nanoelectronics. To understand the operating modes of such calculators in detail, both the optimal arrangement of the qubit system within the structure and changes in its magnetic properties must be comprehensively ...
Added: October 11, 2026
Sharov V., Pavlov A., Eliseyev I. et al., Advanced Optical Materials 2025 Vol. 13 No. 30 Article e01821
Strain engineering is a powerful tool for the development of nanostructured semiconductor devices. In this work, the effect of high external elastic strain is investigated on the photoluminescence of GaN nanowires (NWs). Individual horizontal NWs are strained to bending strains up to 2.2% using an atomic force microscope (AFM) probe. Novel nanomanipulation techniques for mechanical ...
Added: November 12, 2025
E. V. Shpagina, E. S. Tikhonov, Ruhstorfer D. et al., Physical Review B: Condensed Matter and Materials Physics 2025 Vol. 112 No. 14 Article L140503
We investigate a nonequilibrium aspect of the current-driven superconducting-normal phase transition in floating Al islands of epitaxial full-shell Al/InAs nanowires. Within a transition region discontinuous voltage jumps and hysteretic behavior of the I-V characteristics are observed, associated with the destruction and recovery of the superconducting order parameter in the island. The strength of the two ...
Added: November 9, 2025
Babichev A. V., Papylev D. S., S. D. Komarov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2024 Vol. 17 No. 3.1 P. 233–237
The planar microcavity structure based on non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors was fully fabricated by molecular-beam epitaxy. Usage of In0.63Ga0.37As quantum dots reveals room temperature emission near 1110 nm with emission bandwidth of about 80 meV. The determined spectral mismatch between peak position of gain region and reflectivity spectrum dip was about 115 meV at 290 K. ...
Added: May 14, 2025
Solodovnik M., Balakirev S., Ivan S. Makhov et al., Applied Surface Science 2025 Vol. 700 Article 163211
Despite the rapid growth in the number of studies devoted to quantum dot (QD) formation on patterned substrates,
segregation effects that have a significant impact on the properties of QD-based heterostructures remain
largely unexplored. In this paper, we focus on the influence of segregation under different capping regimes on the
optical properties of various InAs/GaAs nanostructures: QDs and ...
Added: April 17, 2025
Balakirev S. V., Makhov I., Kirichenko D. V. et al., Optical Materials 2025 Vol. 163 Article 116964
We reveal a strong dependence of optical properties of InAs quantum dots (QDs) on the As/Ga flux ratio used
during the overgrowth with a low-temperature GaAs layer. Evaluating various characteristics of the photoluminescence
spectra, we determine an optimal As/Ga flux ratio which allows formation of QDs emitting at the
longest wavelengths, with the highest intensity and the largest ...
Added: April 17, 2025
Solodovnik M. S., Kirichenko D., Dukhan D. et al., Applied Surface Science 2025 Vol. 688 Article 162373
This paper proposes a new approach to nanoscale patterning of GaAs substrates that allows formation of subcritical (below the Stranski-Krastanov critical thickness) low-density quantum dots. We demonstrate that the removal of the GaAs native oxide under molecular arsenic flux stimulates the formation of nanosized holes on the substrate surface. Geometric characteristics of these holes (diameter, ...
Added: January 21, 2025
Dubrovskii V., Cirlin G., Kirilenko D. et al., Nanoscale Horizons 2024 Vol. 9 No. 12 P. 2360–2367
Increasing the InN content in the InxGa1xN compound is paramount for optoelectronic applications. It has been demonstrated in homogeneous nanowires or deliberately grown nanowire heterostructures. Here, we present spontaneous core–shell InxGa1xN nanowires grown by molecular beam epitaxy on Si substrates at 625 C. These heterostructures have a high InN fraction in the cores around 0.4 ...
Added: November 23, 2024
Shugabaev T., Gridchin V., Ivan A. Melnichenko et al., Physica Status Solidi - Rapid Research Letters 2025 Vol. 19 No. 4 Article 2400296
A significant (up to 4 times) photoluminescence enhancement of single InP/InAsP/InP nanowires transferred onto a silicon oxide-covered silver layer on silicon substrate with a metal surface roughness level of less than 1 nm and a dielectric thickness of 5 nm has been demonstrated. This phenomenon is explained by the interaction of electron–hole pairs in the semiconductor with ...
Added: November 15, 2024
Бабичев А. В., Пирогов Е. В., Соболев М. С. et al., Физика и техника полупроводников 2022 Т. 56 № 10 С. 1002–1010
The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of ...
Added: November 1, 2024
Бабичев А. В., Nadtochiy A., Blokhin S. et al., Физика и техника полупроводников 2024 Т. 58 № 6 С. 318–325
The growth parameters of InxGa1−xAs quantum dots grown by molecular-beam epitaxy were tested. It has been shown that a decrease in the indium content in quantum dots structures yields to a decrease in the ground state emission wavelength, with subsequent saturation of the behavior. The use of In0.5Ga0.5As quantum dots makes it possible to realize ...
Added: October 23, 2024
Gridchin V., Kotlyar K., Ubyivovk E. et al., ACS Applied Nano Materials 2024 Vol. 7 No. 15 P. 17460–17468
A study on the formation of InGaN ternary compounds in the three-dimensional growth mode is presented.
For the first time, we demonstrate that the self-organization during InGaN growth is responsible for the formation of core−shell nanowires (NWs), nanotubes, zinc blende (ZB) phases, and nanoflowers. It is found that the core−shell InGaN NWs are formed at the very initial stage of growth. ...
Added: October 18, 2024
Makhov I., Kryzhanovskaya N., Dragunova A. et al., Journal of Luminescence 2024 Vol. 276 Article 120819
One drawback of self-organized quantum dots is their low optical gain. The development of new shaping methods that would allow higher gain, for example, due to a higher surface density of the QD array, remains an important task to date. In the present work, arrays of quantum dots have been formed by substituting phosphorous atoms ...
Added: August 27, 2024
Андрюшкин В. В., Dragunova A., Komarov S. et al., Научно-технический вестник информационных технологий, механики и оптики 2022 Т. 22 № 5 С. 921–928
The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing parameters on their optical and structural properties were presented. InGaPAs quantum dots were formed by substituting phosphorus with arsenic in InGaP layer directly during epitaxial growth. The optical properties of ...
Added: June 3, 2024
Babichev A., Sergey D. Komarov, Tkach J. et al., , in: 2022 International Conference on Electrical Engineering and Photonics (EExPolytech) Proceedings.: St. Petersburg: IEEE, 2022. P. 253–256.
Added: May 31, 2024
Гридчин В. О., Сошников И. П., Резник Р. Р. et al., Письма в Журнал технической физики 2023 Т. 49 № 5 С. 32–35
The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor ...
Added: May 20, 2024
Бабичев А. В., Komarov S., Ткач Ю. С. et al., Физика и техника полупроводников 2023 Т. 57 № 1 С. 63–70
The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6monolayers were formed by molecular-beam epitaxy according to the Stransky– Krastanov mechanism on GaAs substrates, using the ...
Added: May 20, 2024