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September 22, 2026
Personal Interest in Doctoral Thesis Topic Most Important for Confidence in Successful Defence
A researcher at HSE University analysed data on 1,539 doctoral students from 161 Russian universities to identify which features of a thesis topic are associated with academic success and engagement. The most important factor was found to be personal interest in the research topic, which was associated with almost all key aspects of doctoral programme experience—from engaging with the academic supervisor to research activity and confidence about successfully defending the thesis. The findings have been published in Higher Education.
September 21, 2026
Researchers Develop Methodology to Assess the Quality of Legal Representation in Criminal Proceedings
Having a good defence attorney in criminal proceedings can largely determine whether a defendant retains their freedom, health and good name. Researchers at HSE University propose a method for predicting an attorney’s performance based on the outcomes of their previous cases. The methodology takes into account the severity of the charges, the complexity of the cases, and the most likely outcome, drawing on judicial statistics.
September 21, 2026
Algebra, Geometry, and AI: Russian and Vietnamese Mathematicians Discuss Current Research
A delegation of scientists from Hanoi visited the HSE Faculty of Computer Science and then took part in a Russian-Vietnamese conference in St Petersburg. The events were part of the three-year project ‘Flexibility and Computational Methods.’ Over the course of the project, the researchers have prepared joint publications and obtained new mathematical results.

 

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Surface Plasmon Polariton Photoluminescence Enhancement of Single InP Nanowires with InAsP Quantum Wells

Physica Status Solidi - Rapid Research Letters. 2025. Vol. 19. No. 4. Article 2400296.
Shugabaev T., Gridchin V., Ivan A. Melnichenko, Bulkin P., Абрамов A., Kuznetsov A., Maksimova A., Novikov I., Khrebtov A., Ubyivovk Y., Kotlyar K., Natalia V. Kryzhanovskaya, Reznik R., Cirlin G.

A significant (up to 4 times) photoluminescence enhancement of single InP/InAsP/InP nanowires transferred onto a silicon oxide-covered silver layer on silicon substrate with a metal surface roughness level of less than 1 nm and a dielectric thickness of 5 nm has been demonstrated. This phenomenon is explained by the interaction of electron–hole pairs in the semiconductor with surface plasmon polaritons. The photoluminescence kinetics and results of modeling confirm the indicated enhancement mechanism.

Research target: Physics Nanotechnologies
Language: English
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Keywords: nanowiresmolecular beam epitaxyInPphotoluminescence enhancementInAsPsurface plasmon polaritons
Publication based on the results of:
Creation and investigation of semiconductor micro- and nanolasers for photonic integrated circuits (2024)
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