Температурные характеристики кольцевых лазеров с активной областью на основе InAs/InGaAs/GaAs-квантовых точек оптического диапазона 1.3 μm
Technical Physics Letters. 2022. Т. 48. № 18. С. 36-40.
Гордеев Н. Ю., Moiseev E., Fominykh N., Kryzhanovskaya N., Бекман А. А., Корнышов Г. О., Зубов Ф. И., Шерняков Ю. М., Zhukov A., Максимов М. В.
The temperature characteristics of ring lasers with a diameter of 480 μm of the novel
structure with an active region based on ten layers of InAs/InGaAs/GaAs quantum dots were studied. Lasers demonstrated a low threshold current density (200 A/cm2 at 20°C in continuous
wave regime), the characteristic temperature of the threshold current in the range 20–100°C
was 68 K, the maximum lasing temperature was 130°C. These values are insignificantly inferior
to the parameters of edge-emitting stripe lasers made from the same epitaxial structure.
Research target: Physics Nanotechnologies
, , et al., IEEE Photonics Technology Letters 2022 Vol. 34 No. 24 P. 1349-1352
We report on the fabrication and studies of Ø100 μm half-disk lasers with an active region based on InGaAs/GaAs quantum dots providing very high modal gain. Such resonators support whispering gallery modes propagating at the cavity periphery. The microlasers show directional light outcoupling: continuous-wave output power emitted from the flat side reaches 17 mW, which is about 7 times greater than the ...
Added: December 13, 2022
Конструкции блокирующих слоев для подавления паразитной рекомбинации в мощных диодных лазерах с GaAs волноводом
, , et al., Физика и техника полупроводников 2022 Т. 56 № 3 С. 363-369
Using numerical simulation, the search for designs of asymmetric barrier layers (ABLs) in a laser diode with a GaAs waveguide emitting at a wavelength of λ = 980 nm is carried out. A pair of ABLs adjoining the active region on both sides blocks undesired charge-carrier flows and suppresses parasitic spontaneous recombination in the waveguide layers. Optimal designs ...
Added: August 11, 2022
, , et al., Quantum Electronics 2022 Vol. 52 No. 7 P. 593-596
Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated ...
Added: December 13, 2022
, Infoscience EPFL 2019 P. 1-163
We have focused on the ability to tune the aluminum (Al) content of the AlGaAs alloy along the growth direction in inverted pyramids (by MOVPE), thus tailoring the potential along a QWR nanostructure. Three parabolic-potential QDs (PQDs) of different potential gradients have thus been realized. The parabolic profiles were changed systematically by fixing the minimum ...
Added: October 29, 2021
, , et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and experimental results on injection lasing in the green–orange spectral range (558–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Влияние конструкции активной области и волновода на характеристики лазеров на основе структур квантовые ямы-точки InGaAs/GaAs
, , et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
, , et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D) dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers with various numbers of InGaAs/GaAs QWD layers in the active region and different waveguide designs. The dependence of ...
Added: March 11, 2021
, , et al., Journal of Lightwave Technology 2021 Vol. 39 No. 23 P. 7479-7485
Modal absorptions in laser-like heterostructures containing InAs self-assembled quantum dots (QDs) and InGaAs quantum well-dots (QWDs) have been studied. The evaluation of photoresponse as a function of waveguide length has allowed us to determine per-layer modal absorptions of 69 and 13 cm-1 for the ground state optical transitions of QWDs and QDs, respectively. The values of the modal absorption can be ...
Added: November 28, 2021
, СПб. : ПОЛИТЕХ-ПРЕСС, 2019
Пособие включает в себя учебные материалы по физике и технологии полупроводниковых квантовых точек и лазеров на основе квантовых точек, включая микролазеры. Квантовые точки – это новая разновидность полупроводниковых квантоворазмерных структур (наноструктур), в которых движение носителей заряда ограничено во всех трех направлениях. Возникающая в результате размерного квантования модификация плотности состояний, а также большая энергия локализации носителей ...
Added: February 10, 2020
Особенности вольт-амперной характеристики микродисковых лазеров на основе квантовых ям-точек InGaAs/GaAs
, , et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
, , et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: the blue-shift with decreasing ...
Added: January 26, 2023
, , et al., Физика и техника полупроводников 2022 Т. 56 № 9 С. 922-927
The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots (quantum well-dots) as a function of the number of their planes and the output loss. Numerical values of the parameters were found that determine the free-carrier absorption in the active region and in the waveguiding layer. The optimal design ...
Added: October 3, 2022
, , et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10-13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
, , et al., Semiconductor Science and Technology 2022 Vol. 37 No. 7 Article 075010
Epi-side down bonding on a silicon substrate of AlGaAs/GaAs microdisk lasers is presented. A heterostructure with coupled large optical cavities enables location of an InGaAs quantum dot active region at a distance of ∼1 µm from the heterostructure surface. The thermal resistance was reduced to 0.2 and 0.1 K/mW for disks of 30 and 50 µm in diameter, ...
Added: July 12, 2022
Gradual evolution from quantum well like to quantum dot like characteristics in InGaAs/GaAs nanostructures
, , et al., Physica Status Solidi (B): Basic Research 2018 Vol. 255 No. 9 Article 1800123
Dense arrays of carrier localizing indium-rich regions (referred to as quantum well-dots, QWDs) formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxial deposition of 4–16 monolayers (ML) of InxGa1xAs (0.3<x<0.5) on 6 misoriented GaAs (100) substrates are studied. It is shown that in addition to QWDs the deposited layers may contain other objects with size and shape ...
Added: March 16, 2021
Энергопотребление при высокочастотной модуляции неохлаждаемого InGaAs/GaAs/AlGaAs-микродискового лазера
, , et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Увеличение эффективности тандема полупроводниковый лазер-оптический усилитель на основе самоорганизующихся 8s квантовых точек
, , et al., Физика и техника полупроводников 2021 Т. 55 № 12 С. 1223-1228
The rate equations are used to analyze the characteristics of a tandem consisting of a laser diode and a semiconductor optical amplifier made of a single heterostructure with quantum dots. The optimal value of the current distribution coefficient the amplifier and the laser, as well as the optimal resonator length that provides the highest output power of the tandem were determined. ...
Added: November 25, 2021
, , et al., Journal of Optical Technology (A Translation of Opticheskii Zhurnal) 2022 Vol. 89 No. 5 P. 298-301
Subject of study. The dependence of the photoluminescence of a flexible film structure, which is an array of InP/InAsP/InP nanowires incorporated into a polymerized trioctylphosphine oxide layer with CdSe/ZnS colloidal quantum dots, on the intensity of excitation in the near-infrared range at room temperature was investigated in this study.Method. Nanowires were synthesized on a Si (III) substrate by ...
Added: September 26, 2022
, , et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40-43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
, , et al., Physical Review Letters 2022 Vol. 129 No. 19 Article 193604
Entangled photon pairs are key to many novel applications in quantum technologies. Semiconductor quantum dots can be used as sources of on-demand, highly entangled photons. The fidelity to a fixed maximally entangled state is limited by the excitonic fine-structure splitting. This work demonstrates that, even if this splitting is absent, the degree of entanglement cannot ...
Added: December 1, 2022
, , et al., Optics Express 2021 Vol. 29 No. 25 P. 40677-40686
p-i-n photodiodes comprising dense arrays of InGaAs quantum dots (referred to as quantum well-dots) were fabricated, and the basic physical processes affecting their highspeed performance were studied for the first time by measuring the frequency response under illumination with photons absorbed either in the quantum well-dots (905-nm illumination) or mainly in GaAs layers (860-nm illumination). A GaAs p-i-n photodiode ...
Added: November 23, 2021
Исследование чувствительности микродискового лазера к изменению показателя преломления окружающей среды
, , et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed. For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum the resonance shift is 9.4 nm ...
Added: October 11, 2021
, , et al., Физика и техника полупроводников 2021 Т. 55 № 9 С. 820-825
Gain saturation in a semiconductor optical amplifier with an array of quantum dots was studied analytically and by numerical simulation on the basis of an analysis of the rate equations. It is shown that, at a moderate injection level, the saturation power increases in proportion to the current density, and then reaches its maximum value, limited by the rate of ...
Added: October 11, 2021
, , et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for creating compact, energy-efficient light sources (microlasers) for various applications owing to their small footprints, high Q factors, planar geometry, in-plane light emission, and high sensitivity to the environment. In this review we present the most recent advances in III–V microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators and discuss ...
Added: September 3, 2021