Температурные характеристики кольцевых лазеров с активной областью на основе InAs/InGaAs/GaAs-квантовых точек оптического диапазона 1.3 μm
The temperature characteristics of ring lasers with a diameter of 480 μm of the novel
structure with an active region based on ten layers of InAs/InGaAs/GaAs quantum dots were studied. Lasers demonstrated a low threshold current density (200 A/cm2 at 20°C in continuous
wave regime), the characteristic temperature of the threshold current in the range 20–100°C
was 68 K, the maximum lasing temperature was 130°C. These values are insignificantly inferior
to the parameters of edge-emitting stripe lasers made from the same epitaxial structure.