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  • Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.
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News
July 6, 2026
Ancient Craniiform Brachiopod: A Newly Discovered Species with a Unique Shell Shape and Lifestyle
Scientists from HSE University, MSU, and Tallinn University of Technology have studied a fossil species of ancient brachiopods that lived in a warm sea in what is now northern Estonia more than 445 million years ago. These ancient brachiopods developed a cup-shaped shell with a protective 'cap' that shielded them from overgrowth by other marine organisms. The study has been published in Palaeogeography, Palaeoclimatology, Palaeoecology.
July 2, 2026
Researchers Discover How Spelling Errors Slow Down Reading in Russian
Psycholinguists from the Centre for Language and Brain at HSE University–St Petersburg have shown that words that are frequently misspelled are processed more slowly by readers, even when presented with the correct spelling. The researchers confirmed this effect for the first time using Russian-language materials and found that response speed is most strongly linked to how confidently individuals can distinguish the correct spelling of a word from an incorrect one. The study has been published in The Mental Lexicon.
July 2, 2026
HSE Develops App for Assessing Phonological Processing in Children
Researchers at the HSE Centre for Language and Brain have developed a new digital tool for assessing children's phonological processing skills—the ZARYA (Sound Analysis of the Russian Language) test battery. It is the first standardised application in Russia designed to provide a fast and reliable assessment of children's ability to distinguish speech sounds, retain them in working memory, and perform phonemic analysis. The app runs on Android tablets and smartphones and is available for download from RuStore. Details of the test validation have been published in the Journal of Speech, Language, and Hearing Research.

 

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Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.

M. : Max press, 2020.
Academic editor: Е. С. Горнев

This issue provides abstracts of XIII International Conference «Silicon – 2020» and XII Young Scientists Scholarship participants presentations devoted to the actual problems of silicon electronics and nano-devices. Presentations touch issues of advanced electronic elements, their fabrication processes and the way of application. Beside traditional topics of silicon bulk, surface and interface interaction influence upon semiconductor devices properties the Book presents some novel themes like research and development of neuromorphic networks as a basic part for artificial intelligence systems. Quantum dots models and research for optoelectronics and photonics benefit are presented as well. As a real applications presentation for electronics model generation and automation design system development may be found.

Chapters
SPICE модели субмикронных КМОП транзисторов в диапазоне криогенной температуры
Ismail-zade M. R., Sambursky L. M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 229–232.
This paper presents Low-T SPICE models of sub-micron MOSFETs, designed to calculate electronic circuits in the cryogenic temperature range (down to 4 K). The procedure for extracting the Low-T SPICE model parameters based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in the cryogenic temperature range has been ...
Added: November 29, 2020
Введение в TCAD и SPICE моделирование полупроводниковых приборов и элементов БИС
Petrosyants K. O., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 35–40.
Conventional BJT, MOSFET, JFET, DMOST, IGBT structures fabricated on bulk silicon and SOI/SOS substrates are characterized as the object of modeling. Popular TCAD simulators and SPICE device models libraries are presented. The model parameters extraction strategies for TCAD device and SPICE circuit simulation based on data proceeding of physical and electrical measurements are described. The ...
Added: December 5, 2020
Унифицированная SPICE-модель биполярного транзистора, учитывающая влияние различных видов радиации
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Измерение и моделирование влияния низкоинтенсивного излучения на цифровые КМОП ИС
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020
TCAD моделирование сбоеустойчивости SELBOX и DSOI КМОП КНИ ячеек памяти
Popov D., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 227–229.
A mixed TCAD-SPICE simulation of the heavy ion impact into a SRAM on SOI CMOS transistors was carried out. The dependence of the threshold LET on temperature was investigated for three configurations of 0.24 μm SOI MOSFET: traditional SOI, Selective BOX and Double SOI. The radiation hardness of SRAM on Double SOI MOSFETs is significantly ...
Added: December 5, 2020
Research target: Electronics and Electrical Engineering
Priority areas: engineering science
Language: Russian
Full text
Text on another site
Keywords: нанотехнологиимоделированиемикроэлектроникаnanotechnologymicroelectronicsматериаловедениекремнийsiliconоптоэлектроникафотоникаmaterials scienceoptoelectronicsphotonicssimulationsнейроморфные системыneuromorphic systems
Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.
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