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  • Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.
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News
July 24, 2026
'Physics Is What the World Is Literally Built On'
Physicist Nina Dzhanayeva, recipient of a Vladimir Potanin Foundation scholarship, focuses her research on nanophotonics. In this interview for the HSE Young Scientists project, she discusses nanowells, scientific intuition, and how physics can help in making frangipane cream puffs.
July 20, 2026
Scientists Create Open Dataset for Studying Concentration
A team of Russian researchers, including scientists from HSE University–St Petersburg, has developed the first open multimodal dataset containing recordings of brain activity, heart function, and video observations to help researchers understand what happens in the human brain during deep concentration. In the future, the dataset could accelerate the development of neural interfaces, rehabilitation technologies, and AI systems. The article has been published in Scientific Data.
July 20, 2026
‘Science Is Universal-It Knows No Borders
Fuad Aleskerov, Tenured Professor and Director of the International Centre of Decision Choice and Analysis at HSE University, together with his colleagues, has developed methods of network analysis in bibliometrics that have made it possible to identify patterns in the appearance and citation of publications in academic journals, as well as their influence on each other. When one or a number of studies are frequently cited by a wide range of journals, this is an indicator that the research is of high quality. By contrast, extensive cross-citation within a limited group of journals increases the likelihood of identifying a network of predatory publications.

 

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Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.

M. : Max press, 2020.
Academic editor: Е. С. Горнев

This issue provides abstracts of XIII International Conference «Silicon – 2020» and XII Young Scientists Scholarship participants presentations devoted to the actual problems of silicon electronics and nano-devices. Presentations touch issues of advanced electronic elements, their fabrication processes and the way of application. Beside traditional topics of silicon bulk, surface and interface interaction influence upon semiconductor devices properties the Book presents some novel themes like research and development of neuromorphic networks as a basic part for artificial intelligence systems. Quantum dots models and research for optoelectronics and photonics benefit are presented as well. As a real applications presentation for electronics model generation and automation design system development may be found.

Chapters
SPICE модели субмикронных КМОП транзисторов в диапазоне криогенной температуры
Ismail-zade M. R., Sambursky L. M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 229–232.
This paper presents Low-T SPICE models of sub-micron MOSFETs, designed to calculate electronic circuits in the cryogenic temperature range (down to 4 K). The procedure for extracting the Low-T SPICE model parameters based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in the cryogenic temperature range has been ...
Added: November 29, 2020
Введение в TCAD и SPICE моделирование полупроводниковых приборов и элементов БИС
Petrosyants K. O., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 35–40.
Conventional BJT, MOSFET, JFET, DMOST, IGBT structures fabricated on bulk silicon and SOI/SOS substrates are characterized as the object of modeling. Popular TCAD simulators and SPICE device models libraries are presented. The model parameters extraction strategies for TCAD device and SPICE circuit simulation based on data proceeding of physical and electrical measurements are described. The ...
Added: December 5, 2020
Унифицированная SPICE-модель биполярного транзистора, учитывающая влияние различных видов радиации
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Измерение и моделирование влияния низкоинтенсивного излучения на цифровые КМОП ИС
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020
TCAD моделирование сбоеустойчивости SELBOX и DSOI КМОП КНИ ячеек памяти
Popov D., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 227–229.
A mixed TCAD-SPICE simulation of the heavy ion impact into a SRAM on SOI CMOS transistors was carried out. The dependence of the threshold LET on temperature was investigated for three configurations of 0.24 μm SOI MOSFET: traditional SOI, Selective BOX and Double SOI. The radiation hardness of SRAM on Double SOI MOSFETs is significantly ...
Added: December 5, 2020
Research target: Electronics and Electrical Engineering
Priority areas: engineering science
Language: Russian
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Keywords: нанотехнологиимоделированиемикроэлектроникаnanotechnologymicroelectronicsматериаловедениекремнийsiliconоптоэлектроникафотоникаmaterials scienceoptoelectronicsphotonicssimulationsнейроморфные системыneuromorphic systems
Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.
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