Sensors based on MIS structures for study of ionization radiations

Ch. 8337203. P. 1–3.

Andreev V. V., Bondarenko G.G., Andreev D. V., Akhmelkin D. M.

In this paper we have shown a construction of an
active sensitive element of irradiation sensor. This sensor is based
on metal-insulator-semiconductor structures (MIS structures). In
this work we have researched an influence of α-particles to the
MIS structures, which were in the mode of the constant current
maintaining. This mode is characterized by the high-field Fowler-
Nordheim injection. We have shown that ionization processes
occurring in dielectric films of MIS structures, which are in the
mode of charging and discharging of capacitance and also in the
mode of high-field tunnel injection of electrons by pulse of
constant current, could be used in order to register the
irradiation. We have found out advantages and disadvantages of
utilization of MIS sensors to register charged particles. We also
have advised how to use these layers.

Keywords: ионизирующее излучение, МДП-структуры, sensors, сенсоры, MIS structures, ionization irradiation

In book

2018 Moscow Workshop on Electronic and Networking Technologies (MWENT). Proceedings

M.: IEEE, 2018.