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  • Подход к экстракции параметров SPICE-моделей субмикронных КНИ МОПТ с учетом повышенной температуры (до 300°C)
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July 20, 2026
Scientists Create Open Dataset for Studying Concentration
A team of Russian researchers, including scientists from HSE University–St Petersburg, has developed the first open multimodal dataset containing recordings of brain activity, heart function, and video observations to help researchers understand what happens in the human brain during deep concentration. In the future, the dataset could accelerate the development of neural interfaces, rehabilitation technologies, and AI systems. The article has been published in Scientific Data.
July 20, 2026
‘Science Is Universal-It Knows No Borders
Fuad Aleskerov, Tenured Professor and Director of the International Centre of Decision Choice and Analysis at HSE University, together with his colleagues, has developed methods of network analysis in bibliometrics that have made it possible to identify patterns in the appearance and citation of publications in academic journals, as well as their influence on each other. When one or a number of studies are frequently cited by a wide range of journals, this is an indicator that the research is of high quality. By contrast, extensive cross-citation within a limited group of journals increases the likelihood of identifying a network of predatory publications.
July 20, 2026
Scientists Propose Method for More Efficient Resource Use in Machine Learning
An international group of researchers, including mathematicians from the AI and Digital Science Institute at the HSE Faculty of Computer Science, has provided a theoretical justification for a simple and computationally efficient method of estimating uncertainty in Stochastic Gradient Descent (SGD). The paper has been published on the scientific preprint server arXiv.org and presented at AISTATS 2026.

 

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Подход к экстракции параметров SPICE-моделей субмикронных КНИ МОПТ с учетом повышенной температуры (до 300°C)

С. 282–283.
Ismail-zade M. R.
Language: Russian
Full text
Keywords: экстракция параметровКНИ МОПТSPICE-модельвысокая температура

In book

Межвузовская научно-техническая конференция студентов, аспирантов и молодых специалистов им. Е.В. Арменского
М.: МИЭМ НИУ ВШЭ, 2017.
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Программно-аппаратный комплекс для определения параметров SPICE-моделей электронных компонентов для гражданских и специальных применений
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A mixed TCAD-SPICE simulation of the heavy ion impact into a SRAM on SOI CMOS transistors was carried out. The dependence of the threshold LET on temperature was investigated for three configurations of 0.24 μm SOI MOSFET: traditional SOI, Selective BOX and Double SOI. The radiation hardness of SRAM on Double SOI MOSFETs is significantly ...
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The circuit design of electronic devices for harsh operating conditions requires SPICE models of electronic components that take into account the influence of ultra-low and ultra-high ambient temperatures. However, the standard SPICE models of electronics component, available in commercial versions of SPICE-like simulators, provide an adequate accuracy in a limited temperature range (-60 … +150 ...
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SPICE-модели JFET и MOSFET в широком диапазоне температуры (–200…+300°C)
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Added: October 22, 2018
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Added: October 22, 2018
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It is shown that BSIM3 standard MOSFET SPICE model does not provide more abrupt MOSFET transconductance dependence on gate voltage at low temperature (up to –200°C) caused by mobility increase. Enhanced MOSFET macro model for low temperature is proposed which accounts for more abrupt MOSFET transconductance dependence on gate voltage. Additional nonlinear voltage-controlled voltage source ...
Added: September 9, 2018
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I-V characteristics and reliability parameters for the set of hardened SOIMOSFET'swith special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range up to 300 °C. The reliability aspects under test for MOSFET's are threshold voltage shift, subthreshold slope and mobility degradation, gate leakage current ...
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The sub-100-nm CMOS process with a high-κ gate dielectric is one of the key technologies for the fabrication of digital, analog, and RF VLSI circuits and on-chip systems. The influence of ionizing radiation on 45-nm MOS transistors with a high-κ dielectric fabricated using the bulk-silicon and SOI technologies is simulated. Effects induced by the substitution of SiO2 with ...
Added: January 30, 2018
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С помощью Synopsys TCAD проводилось моделирование тока стока n-канального КНИ МОП-транзистора при воздействии ионизирующего излучения и повышении температуры от 27°С до 160°С. Показано, что полный ток утечки стока при повышенной температуре существенно выше суммы теплового тока необлученного транзистора и радиационного тока утечки при комнатной температуре. ...
Added: October 18, 2017
Подсистема схемотехнического проектирования КМОП БИС с учётом совместного влияния радиационных и тепловых эффектов
Kharitonov I. A., В кн.: XVI Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 3 - 7 июля 2017 года, г. Суздаль, Россия.: М.: НИИСИ РАН, 2017. С. 64–65.
. ...
Added: September 13, 2017
Определение параметров SPICE-моделей МОПТ при низких температурах (до минус 200°C)
Kharitonov I. A., Четвериков И. А., Кузин Е. Ю. et al., В кн.: XVI Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 3 - 7 июля 2017 года, г. Суздаль, Россия.: М.: НИИСИ РАН, 2017. С. 66–67.
. ...
Added: September 13, 2017
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