?
Влияние температуры на формирование нарушенных слоев в кремнии при протонном облучении
С. 539–549.
Dyachkova I. G., Novoselova E., Smirnov I. S.
In book
М.: ФГБНУ "НИИ ПМТ", 2015.
Pavlova T., Shevlyuga V. M., Physical Chemistry Chemical Physics 2025 Vol. 27 No. 43 P. 23421–23427
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr_3 molecule, which fully dissociates on the surface at 77 K. We observed diffusion of P atoms both along and across the rows of Si dimers. To support the observation ...
Added: October 20, 2025
T. V. Pavlova, Journal of Chemical Physics 2025 Vol. 162 No. 19 P. 194701–194701
The precise incorporation of a phosphorus atom into a silicon surface is essential for the fabrication of nanoelectronic devices in which the active area is formed from single impurities. The most accurate approach employs scanning tunneling microscopy lithography, which may be done with atomic precision. However, the accuracy decreases when phosphorus is incorporated into the ...
Added: June 27, 2025
Власенко Л. С., Fedosov I. S., Письма в Журнал технической физики 2024 Т. 50 № 9 С. 3–5
Electron paramagnetic resonance spectra of centers localized on (111), (110), and (100) oriented surface of silicon wafers were observed and studied using spin dependent microwave photoconductivity. The wafers were not subjected to high temperature oxidization, but oxidized on air at room temperature. The optimal experimental conditions for detection the surface recombination centers, having the sensitivity ...
Added: May 12, 2025
Pavlova T., Shevlyuga V. M., Journal of Chemical Physics 2024 Vol. 160 No. 5 Article 054701
For the most precise incorporation of single impurities in silicon, which is utilized to create quantum devices, a monolayer of adatoms on the Si(100) surface and a dopant-containing molecule are used. Here we studied the interaction of a phosphorus tribromide with a chlorine monolayer with mono- and bivacancies in a scanning tunneling microscope (STM) at ...
Added: July 2, 2024
Гридчин В. О., Сошников И. П., Резник Р. Р. et al., Письма в Журнал технической физики 2023 Т. 49 № 5 С. 32–35
The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor ...
Added: May 20, 2024
Gridchin V. O., Komarov S. D., Soshnikov I. P. et al., Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques 2024 Vol. 18 No. 2 P. 408–412
In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are investigated. It is found that the formation of InGaN nanowires with a core–shell structure occurs when the III/V flux ratio (taking into account the In-incorporation ...
Added: May 20, 2024
Мельниченко И. А., Komarov S., Dragunova A. et al., Письма в Журнал технической физики 2024 Т. 50 № 5 С. 3–6
С помощью конфокальной оптической микроскопии и спектроскопии микрофотолюминесценции исследованы субмикронные нановключения InAsxP1-x/InP, сформированные методом селективного эпитаксиального роста в кремнии с использованием металлоорганической газофазной эпитаксии и расплавленной капли элемента III группы. Исследовано влияние расстояния между нановключениями на интенсивность фотолюминесценции, получены температурные зависимости фотолюминесценции в диапазоне 77-290 K. При комнатной температуре получено излучение в спектральном диапазоне 1.2 ...
Added: February 13, 2024
T. V. Pavlova, V. M. Shevlyuga, Journal of Chemical Physics 2023 Vol. 159 No. 21 Article 214701
The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and then exposed to PBr3 directly in the STM chamber. Uncharged DBs rarely react with molecules. On the contrary, almost all positively charged DBs were filled with molecule fragments. ...
Added: January 29, 2024
Reznik R. R., Gridchin V. O., Kotlyar K. P. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.1 P. 153–157
AlGaAs nanowires with InAs quantum dots on the silicon surface were synthesized by molecular-beam epitaxy. Morphological and optical properties of grown nanostructures were studied. It is important to note, that emission from quantum dots is observed in the wavelength range from 780 to 970 nm. Assumptions about the nature of short-wave radiation from quantum dots ...
Added: July 3, 2023
Zelenina A. I., Gordeev I. S., Kolotova L., Journal of Non-Crystalline Solids 2023 Vol. 606 Article 122215
Plasmonic nanoobjects have many applications from biosensors to electronic device components. The most promising method for obtaining such objects is the laser printing method due to the possibility of controlling the resulting structure by experimental conditions. In this work, the influence of laser printing initial parameters and Al content on silicon-aluminum nanoparticles (NPs) structure were investigated by a combination ...
Added: June 28, 2023
Vladimir M. Shevlyuga, Vorontsova Y., Tatiana V. Pavlova, Journal of Physical Chemistry C 2023 Vol. 127 No. 19 P. 8978–8983
The adsorption of PBr3 on the Si(100)-2 × 1 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissociates on the Si(100) surface at room temperature into P and Br atoms. In most cases, the dissociated molecule was observed in STM on three neighboring Si dimers. DFT calculations confirm ...
Added: May 29, 2023
Melnichenko I., Kryzhanovskaya N., Berdnikov Y. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 260–264
We present a photoluminescence study of InP nanostructures monolithically integrated to Si (100) substrate. The InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach by metal–organic vapor phase epitaxy via selective area growth driven by molten alloy. The obtained InP/Si nanostructures have submicron size above and below substrate surface. ...
Added: March 14, 2023
Reznik R. R., Gridchin V. O., Kotlyar K. P. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 31–35
In this work, we have studied the physical properties of InGaAs quantum dots (QDs) in AlGaAs nanowires (NWs) synthesized on silicon at different temperatures. The results of the studies have shown that, a decrease in the growth temperature leads to an increase in the mole fraction of indium in the InGaAs QD solid solution. In ...
Added: March 14, 2023
Кондраченко Л. А., Рассадин А. Э., Чистяков А. С., Soviet Technical Physics Letters (English Translation of Pis'ma v Zhurnal Tekhnicheskoi Fiziki) 2005 Vol. 31 No. 2 P. 101–102
A nonlinear phenomenological equation is proposed for the description of shallow (≤1 μm) impurity diffusion in semiconductors and is solved by numerical methods. A comparison to the results of measurements of the diffusion of arsenic in silicon show good agreement between the proposed theory and experiment. ...
Added: December 22, 2022
Dvoretckaia L. N., Gridchin V. O., Mozharov A. M. et al., Nanomaterials 2022 Vol. 12 No. 12 Article 1993
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires(NW), due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires ...
Added: September 27, 2022
Reznik R., Ilkiv I., Kotlyar K. et al., Physica Status Solidi - Rapid Research Letters 2022 Vol. 16 No. 7 Article 2200056
Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building blocks for quantum light sources. Herein, for the first time, the results of growing AlGaAs NWs with InGaAs QDs by molecular-beam epitaxy on a silicon substrate are shown. The optimal growth temperature is determined and the physical properties of the grown nanostructures are ...
Added: September 27, 2022
Starikov S., Gordeev I., Lysogorskiy Y. et al., Computational Materials Science 2020 Vol. 184 Article 109891
Metal-semiconductor nanostructures are key objects for multifunctional electronics and optical design. We report
a new interatomic potential for atomistic simulation of a ternary Si-Au-Al system. The development procedure
was based on the force-matching method that allowed us to create the potential without use of experimental
data at the fitting. Extensive validation including elastic, thermophysical and defect properties
demonstrates a ...
Added: January 28, 2022
Юрасов Д. В., Байдакова Н. А., Verbus V. A. et al., Физика и техника полупроводников 2021 Т. 55 № 5 С. 420–426
In this work, formation of locally tensile strained Ge structures (micro-bridges) on SOI substrates embedded into microcavities is reported and their optical properties are discussed. The cavity compatible with the shape of the active region was designed in such a way as to provide an effective localization of the
electromagnetic field in the active region of ...
Added: October 11, 2021
Mosharev P., Ишханов Б. С., Исупов Е. Л. et al., М.: КДУ, Университетская книга, 2018.
Учебное пособие «Протон» написано на основе курса лекций проф. Б. С. Ишханова «Нуклеосинтез» для студентов 5 курса физического факультета МГУ. Рассматриваются актуальные вопросы образования протонов во Вселенной, характеристики протона, свойства антипротонов, связанные состояния протона, антипротона, возможные каналы распада протона.
Пособие будет полезно при проведении семинарских занятий и для самостоятельной работы студентов физических специальностей. ...
Added: September 30, 2021
М.: МАКС Пресс, 2020.
This issue provides abstracts of XIII International Conference «Silicon – 2020» and XII Young Scientists Scholarship participants presentations devoted to the actual problems of silicon electronics and nano-devices. Presentations touch issues of advanced electronic elements, their fabrication processes and the way of application. Beside traditional topics of silicon bulk, surface and interface interaction influence upon ...
Added: November 29, 2020
Pavlova T., Shevlyuga V.M., Andryushechkin B. V. et al., Physical Review B: Condensed Matter and Materials Physics 2020 Vol. 101 No. 23 P. 235410–235410
We insert and manipulate a single chlorine atom in chlorine monolayer on a Si(100)-2 × 1 surface using a scanning tunneling microscope. Two objects were created—a Cl atom in a groove between two dimer rows, and bridge-bonded Cl on a silicon dimer. Changing the voltage polarity leads to conversion of the objects into each other. ...
Added: November 16, 2020