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News
May 20, 2026
HSE University Opens First Representative Office of Satellite Laboratory in Brazil
HSE University-St Petersburg opened a representative office of the Satellite Laboratory on Social Entrepreneurship at the University of Campinas in Brazil. The platform is going to unite research and educational projects in the spheres of sustainable development, communications and social innovations.
May 18, 2026
The 'Second Shift' Is Not Why Women Avoid News
Women are more likely than men to avoid political and economic news, but the reasons for this behaviour are linked less to structural inequality or family-related stress than to personal attitudes and the emotional perception of news content. This conclusion was reached by HSE researchers after analysing data from a large-scale survey of more than 10,000 residents across 61 regions of Russia. The study findings have been published in Woman in Russian Society.
May 15, 2026
Preserving Rationality in a Period of Turbulence
The HSE International Laboratory for Logic, Linguistics and Formal Philosophy studies logic and rationality in a transformed world characterised by a diversity of logical systems and rational agents. The laboratory supports and develops academic ties with Russian and international partners. The HSE News Service spoke with the head of the laboratory, Prof. Elena Dragalina-Chernaya, about its work.

 

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Molecular-Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures

Physica Status Solidi - Rapid Research Letters. 2022. Vol. 16. No. 7. Article 2200056.
Reznik R., Ilkiv I., Kotlyar K., Gridchin V., Bondarenko D., Lendyashova V., Ubyivovk E., Anna S. Dragunova, Natalia V. Kryzhanovskaya, Cirlin G. E.

Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building blocks for quantum light sources. Herein, for the first time, the results of growing AlGaAs NWs with InGaAs QDs by molecular-beam epitaxy on a silicon substrate are shown. The optimal growth temperature is determined and the physical properties of the grown nanostructures are studied. It is shown that the grown nanostructures exhibit photoluminescence (PL) signal up to room temperature in a wide wavelength range, including 1.3 μm emission which is important for the optical fiber transmission. It is found that in addition to InGaAs QDs radial InGaAs quantum wells are formed inside the NWs as a result of lateral/axial InGaAs growth competition. The proposed technology opens up new possibilities for the integration of direct-band III–V materials with the silicon platform for various applications in the field of silicon photonics and quantum communication technology.

Research target: Physics Nanotechnologies
Language: English
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Keywords: квантовые точкикремнийsiliconquantum dotsnanowiresmolecular-beam epitaxyмолекулярно-пучковая эпитаксиянитевидные нанокристаллыIII–V semiconductorsA3B5 полупроводники
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)
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