Формирование и исследование оптических свойств локально растянутых Ge микроструктур, встроенных в резонаторы

Физика и техника полупроводников. 2021. Т. 55. № 5. С. 420–426.

Юрасов Д. В., Байдакова Н. А., Verbus V. A., Гусев Н. С., Морозова Е. Е., Шенгуров Д. В., Яблонский А. Н., Новиков А. В.

In this work, formation of locally tensile strained Ge structures (micro-bridges) on SOI substrates embedded into microcavities is reported and their optical properties are discussed. The cavity compatible with the shape of the active region was designed in such a way as to provide an effective localization of the

electromagnetic field in the active region of the structure, as well as to minimize the strain redistribution due to the cavity formation. Microphotoluminescence (PL) studies have shown a remarkable enhancement of the PL intensity for the locally strained areas as compared to the initial Ge film. It was shown that the formation

of a microcavity leads to a decrease in the maximum strain in the active region of the structure, but provides an overall increase in the PL intensity.

Keywords: деформация, deformation, кремний, германий, Si, Ge