On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties

Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques. 2024. Vol. 18. No. 2. P. 408–412.

Gridchin V. O., Komarov S. D., Soshnikov I. P., Shtrom I. V., Reznik R. R., Kryzhanovskaya N. V., Cirlin G. E.

In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are investigated. It is found that the formation of InGaN nanowires with a core–shell structure occurs when the III/V flux ratio (taking into account the In-incorporation coefficient) is about 0.9–1.2. At the same time, an increase in the III/V flux ratio from the intermediate growth conditions to metal-rich conditions leads to a decrease in the In content in nanowires from ~45 to ~35%. Samples of this type exhibit photoluminescence at room temperature with a maximum in the range from 600 to 650 nm. A further increase in the III/V flux ratio to ~1.3 or its decrease to ~0.4 lead to the formation of merged nanocolumnar layers with a low In content. The results obtained may be of interest for studying the growth processes of InGaN nanowires and creating RGB lightemitting devices based on them.

Keywords: кремний, silicon, nanowires, InGaN, molecular-beam epitaxy, молекулярно-пучковая эпитаксия, photoluminescence, нитевидные нанокристаллы, фотолюминесценция, InGaN