SPICE-модели фотодиодов и фототранзисторов для расчёта КНС КМОП фоточувствительных ячеек
Qucs open-source circuit simulator and its applications for educational and research applications in field of EMC and ESD are considered. Its advantages and disadvantages are considered. New features introduced in Qucs are considered. One of the authors is Qucs developer.
The corrections of the methodology of power BJT and MOSFET transistor models parameter extraction taking into account the self heating effects are presented. For BJT these corrections are included into VBIC model parameter extraction process. For MOSFET current generator connected to standard SPICE MOS model is proposed to take into account drain current growth with transistor temperature.
An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static and dynamic radiation influence are connected. Maximum simulation error is 5–7% in the dose range up to 1 Mrad. It is shown that EKV-RAD spends less CPU time by 15–30% for analog and 40–50% for digital SOI/SOS CMOS circuits simulations compared to BSIMSOI-RAD model.
The article deals with the general approach to the construction of a distributed system of circuit simulation as part of information support of the product life cycle. The implementation of these approaches is demonstrated on the example of the creation of one of the elements of the system. This work/article is an output of a research project implemented as part of the Basic Research Program at the National Research University Higher School of Economics (HSE).