Моделирование схем с сегнетоэлектрическими емкостями

Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС). 2018. № 1. С. 83–87.

Гурарий М. М., Жаров М. М., Рассадин А. Э., Русаков С. Г., Ulyanov S.

One of the promising directions in Low Power researches is associated with ferroelectric materials whose effectiveness is based on the existence of two stable states and on the negative differential capacitance in charge-voltage characteristics. The advantages are usually exercised in chains comprising both ferroelectric and traditional nonlinear capacitances (e.g. MOSFET gate) which can contain floating nodes. The aim of the paper is capacitors models development providing analysis of ferroelectric circuits by any SPICE-like simulator. Separate models for standalone capacitors defined by “charge on voltage” and “voltage on charge” dependencies are proposed. Each model contains behavioral voltage source, unit capacitance and linear current-controlled current source. “Charge” terminal established in the models enables analyzing charge waveforms, setting charge initial conditions and using charge-controlled sources. For series connection of any number of nonlinear capacitors with floating nodes, the equivalent nonsingular subcircuit is presented.

Keywords: схемотехническое моделирование, circuit simulation, ferroelectric, negative capacitance, capacitance model, controlled sources, floating node, сегнетоэлектрики, отрицательная емкость, модель емкости, управляемый источник, плавающий узел