Проектирование БРЭА КА с учетом предъявляемых жестких требований по радиационной стойкости
A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated.
The book is considered a non-existing method to improve the accuracy of modeling in computer aided design of airborne electronic aids (ES). Namely, to clarify the geometrical and physical parameters of the models onboard ES running on the print sites, a method is proposed together two complementary approaches to solving this problem, the physical and mathematical modeling design stage . Moreover, we investigate the physical layout is not only the printhead, and a fragment and, based on a physical model of the fragment identification procedures specified by the geometric and physical parameters of the design, in which an electric, thermal, and mechanical processes. The identified parameters are needed to improve the accuracy of research conducted by an integrated mathematical model of the full-sized printed circuit assemblies ES. Opisyvaemsy method in the book is the development of models of integration of research work carried out at the Moscow State Institute of Electronics and Mathematics (MIEM) in the development of new versions of the automated system to ensure reliability and quality of the equipment ASONIKA. The book is intended for scientists and specialists involved in the creation of ES vysokonadezhnoyh board, as well as graduate students and students engaged in research in this field.