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  • Радиационные изменения параметров полупроводниковых материалов. Учебное пособие по дисциплине: “Физика электронных приборов и средств связи”
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News
August 12, 2026
‘I Would Like My Research to Help Make the World a Calmer and Better Place
Whatever task Saraa Ali, Junior Research Fellow at the Laboratory of Methods for Big Data Analysis (LAMBDA) of the AI and Digital Science Institute (HSE Faculty of Computer Science), is working on, she thinks about how it can benefit people. She told the Young Scientists of HSE University project about her large family, diagnosing three-phase motors, and her dream of building a children’s home in her native country.
August 11, 2026
‘The Peak of Stupidity and ‘The Valley of Despair: HSE Economists Propose an Explanation for the Dunning–Kruger Effect
The Dunning–Kruger effect, which describes a sharp surge in self-confidence among beginners followed by an equally rapid decline as they gain experience, can be explained by the nature of the learning process and the acquisition of new knowledge. This conclusion was reached by Andrey Vorchik of the HSE Faculty of Economic Sciences together with independent researcher Murat Mamyshev. They developed a mathematical model of learning and demonstrated how subjective confidence is formed and changes as knowledge accumulates, as well as how teachers can reduce the ‘valley of despair’ experienced by learners.
July 24, 2026
‘I Like Self-Fulfilling Prophecies
Andrey Vorchik studies happiness, delivers popular science lectures, and believes that science should address social issues as well. In an interview for the Young Scientists of HSE University project, he spoke about how emotions influence decision-making, the Bermuda Triangle formed by the bathroom, refrigerator, and bed, and the ideal formula for education.

 

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Радиационные изменения параметров полупроводниковых материалов. Учебное пособие по дисциплине: “Физика электронных приборов и средств связи”

M. : HSE, 2018.
Вологдин Э. Н., Lysenko A. P.

The main content of the training manual is:

  • consideration of issues of interaction of the main types of radiation with a solid,
  • structures of specific point and group radiation defects in silicon, germanium and gallium arsenide are considered,
  • Theoretical prerequisites for the calculation of the change in the basic electro-physical parameters of semiconductors are considered;
  • a summary of the currently available empirical dependences of the main parameters of semiconductors on the integral irradiation flux by various types of radiation exposure is given.
Priority areas: engineering science
Language: Russian
Full text
Keywords: радиационная стойкостьполупроводниковые материалыradiation resistancesemiconductor materials
Радиационные изменения параметров полупроводниковых материалов. Учебное пособие по дисциплине: “Физика электронных приборов и средств связи”
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XVII Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 14 - 18 мая 2018 года, г. Суздаль, Россия
М.: НИИСИ РАН, 2018.
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The main content of the training manual is: consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors, Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients), the effect of nuclear reactions and fast annealing on the parameters of transistors is considered; Classification ...
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. ...
Added: September 13, 2017
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М.: НИИСИ РАН, 2017.
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Added: September 13, 2017
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Petrosyants K. O., Popov D., В кн.: Международной форум "Микроэлектроника-2016". 2-я научная конференция "Интегральные схемы и микроэлектронные модули".: М.: Техносфера, 2016. С. 303–308.
В работе с помощью средств TCAD проведено моделирование двух перспективных разновидностей глубоко субмикронных КНИ МОПТ с частично скрытым оксидом (Partial SOI) и L-образным скрытым оксидом (quasi-SOI) с целью оценки их радиационной стойкости и влияния эффекта «саморазогрева». На примере 100 нм КНИ МОП-транзистора показано, что новые структуры (Partial SOI и Quasi-SOI) по сравнению со стандартной КНИ МОПТ структурой ...
Added: October 11, 2016
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The effect of fast electrons with energy of 0.5–6.2 MeV at a fluence of 1018 electrons/cm2 and γ sources of 60Со (Е = 1.25 МeV) at the absorbed dose of 0.1–25 MGy on the radiation-protective composites based on a magnetite matrix used for biological protection of nuclear reactors is calculated and studied experimentally. The depth ...
Added: September 21, 2016
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Petrosyants K. O., Kharitonov I. A., Sambursky L. M. et al., В кн.: 19-ая Всероссийская научно-техническая конференция «Радиационная стойкость электронных систем» «СТОЙКОСТЬ-2016».: ФГУП "НИИП", 2016. С. 97–98.
С помощью 2D TCAD моделирования исследован тиристорный эффект, вызванный прохождением тяжелой заряженной частицы (ТЗЧ) через структуру традиционного (объемного) КМОП инвертора и инвертора, выполненного по технологии с дополнительными слоями диэлектрической изоляции, окружающими области стока и истока (“quasi-SOI” with L-type isolation). Показано, что пороговое значение ЛПЭ, вызывающее защелкивание паразитной тиристорной структуры для классической объемной технологии составляет 25 МэВ·см2/мг, ...
Added: June 20, 2016
Моделирование сбоеустойчивости КМОП КНИ ячеек памяти при воздействии отдельных тяжелых частиц при повышенной температуре (до 300oС)
Petrosyants K. O., Kharitonov I. A., Popov D. et al., В кн.: 19-ая Всероссийская научно-техническая конференция «Радиационная стойкость электронных систем» «СТОЙКОСТЬ-2016».: ФГУП "НИИП", 2016. С. 56–57.
Представлены результаты совместного приборно-технологического (TCAD)-схемотехнического (SPICE) моделирования устойчивости ячейки памяти, изготовленной по высокотемпературной КНИ КМОП технологии (0.35 мкм) к воздействию тяжелых частиц при повышенной температуре. Показано, что устойчивость ячейки памяти заметно снижается при увеличении температуры от комнатной до 300°С. ...
Added: June 20, 2016
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