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Макромодель EKV-RAD для КНИ/КНС МОП-транзисторов, учитывающая радиационные эффекты
С. 8–20.
Novikov K., В кн.: «Фундаментальные, поисковые, прикладные исследования и инновационные проекты». Сборник трудов Национальной научно-практической конференции.: М.: РТУ МИРЭА, 2022. С. 261–264.
It is not a trivial task to develop an effective overhead power line short circuit sensor while being restricted on weight, dimensions, power consumption, and the relative position of the sensor and the power line wire. Traditionally, a current transformer similar to a Rogowski coil is used as a sensor, followed up by either a ...
Added: May 21, 2023
Petrosyants K. O., Ismail-zade M. R., Kozhukhov M. et al., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 183–194
The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
Kharitonov I. A., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 2.: ИППМ РАН, 2021. С. 73–80.
Описаны дополнения к стандартным SPICE моделям МОП элементов схем, учитывающие эф-фекты их старения, обусловленные влиянием горячих но-сителей, пробоя диэлектрика и электромиграции. Наборы таких моделей вместе со средствами определения их параметров и средствами SPICE моделирования объ-единены в подсистему SPICE моделирования КМОП схем с учетом факторов старения и оценки параметров надеж-ности и времени бессбойной работы. Приведены примеры ...
Added: June 8, 2022
Petrosyants K. O., В кн.: Математическое моделирование в материаловедении электронных компонентов МММЭК–2021.: М.: МАКС Пресс, 2021. С. 112–116.
Added: November 30, 2021
Kozhukhov M., Мухаметдинова А. Р., Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС) 2021 № 4 С. 81–85
A SPICE macromodel of the SiGe HBTs taking into account aging effects is presented. It consists of the standard core model selected by the designer and an additional subcircuit taking into account the hot-carrier effects. The macromodel was included on SPICE-like simulators. The advantages of SPICE-model version of SiGe HBT are high accuracy of description for device ...
Added: November 15, 2021
Лыткарино МО: АО "НИИП", 2020.
History
Published since 1990
Subject
External radiation operating conditions of products of electronics and radio-electronic equipment
Radiation and electromagnetic effects in radioelectronics, parameters degradation, failures, single failures
Assessment and support of radiation resistance and reliability of products of electronics, radio-electronic equipment, radio engineering materials, including materials of space assignment
Calculation methods of determination of radiation resistance of products
Test installations and accelerators, ...
Added: July 14, 2021
Sadovnichii D. N., A.P. Tyutnev, Milekhin Y. M., Russian Chemical Bulletin 2020 No. 9 P. 1607–1613
The modern state of experimental and theoretical studies of the radiation-induced conductivity and charging of polymeric dielectrics under the action of electron beams is considered. The eff ect of the molecular mobility on the transport of excess charge carriers is discussed. ...
Added: December 19, 2020
Садовничий Д. Н., А.П. Тютнев, Мелехин Ю. М., Известия Академии наук. Серия химическая 2020 № 9 С. 1607–1613
В обзоре рассмотрено современное состояние вопросов экспериментального и теоретического изучения радиационно-индуцированной электропроводности и электризации полимерных диэлектриков при воздействии пучков электронов. Обсуждается влияние молекулярной подвижности на транспорт избыточных носителей заряда в полимерных материалах. ...
Added: December 15, 2020
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А. et al., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 232–235.
Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate ...
Added: December 5, 2020
Petrosyants K. O., Kozhukhov M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 394–397.
The unified Si BT/SiGe HBT SPICE-model is presented, which allows performing SPICE simulation of integrated circuits that considering the radiation effect. The results of measurements and modeling of electrical characteristics of bipolar transistors before and after exposure to various radiation types are presented. ...
Added: December 5, 2020
Andreev D. V., Bondarenko G.G., Andreev V. V. et al., Acta Physica Polonica A 2019 Vol. 36 No. 2 P. 263–266
The paper considers an influence of different kinds of radio-frequency plasma treatments onto modification
of MIS structures with a thermal SiO2 film which is aimed at improvement of electro-physical parameters of
the film. It was found that for the modification of MIS structures it is more preferable to utilize the oxygen
plasma radio-frequency plasma treatment performed by a ...
Added: November 5, 2019
Гурарий М. М., Жаров М. М., Русаков С. Г. et al., Наноиндустрия 2018 № 82 С. 410–411
The paper considers the problems of envelope following method construction for determining transient response and steady state of integrated circuits. The envelope following algorithms based on using one-step high order integration methods have been offered. ...
Added: February 12, 2019
Гурарий М. М., Жаров М. М., Русаков С. Г. et al., Журнал радиоэлектроники 2018 № 5 С. 5
The formalized approach for periodic distortion analysis is presented. The computational method is based on exploitation of the properties of the simplified Newton iterative process to solve nonlinear problems in functional space. The numerical scheme of periodic distortion analysis is described. Unlike Volterra series this technique doesn’t require computation of the second and third derivatives ...
Added: February 12, 2019
Гурарий М. М., Жаров М. М., Русаков С. Г. et al., Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС) 2018 № 1 С. 103–108
The application of conventional transient analysis to find the periodic steady-state solution often results in a long simulation time and hence special purpose means are needed. Unlike the transient analysis the periodic steady-state analysis solves a periodic boundary-value problem. The shooting-Newton method transforms the solution of the periodic boundary-value problem to the solution of sequence ...
Added: February 12, 2019
Гурарий М. М., Жаров М. М., Рассадин А. Э. et al., Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС) 2018 № 1 С. 83–87
One of the promising directions in Low Power researches is associated with ferroelectric materials whose effectiveness is based on the existence of two stable states and on the negative differential capacitance in charge-voltage characteristics. The advantages are usually exercised in chains comprising both ferroelectric and traditional nonlinear capacitances (e.g. MOSFET gate) which can contain floating ...
Added: February 12, 2019
Гурарий М. М., Жаров М. М., Русаков С. Г. et al., Информационные технологии 2018 Т. 24 № 9 С. 563–572
Main stages of projective model order reduction (MOR) methods for electrical circuits include model construction by Pade approximation, implementation of Krylov subspace methods for essential decrease of computational noise, application of congruent transform to save circuit passivity, using block-Krylov methods for multiport circuits and multipoint rational-Krylov algorithms to mitigate the redundancy of reduced models. The ...
Added: February 12, 2019
Гурарий М. М., Жаров М. М., Русаков С. Г. et al., Информационные технологии 2018 Т. 24 № 7 С. 435–444
The directions of improvement of minimax methods for circuit design problems are considered. The choices of generalized quality criterion for the circuit design is discussed. It is concluded that the minimax criterion has advantages over other formulations of design targets. New approach to setting of individual objectives for each performance indicator is proposed. The approach ...
Added: February 12, 2019
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404–405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42–45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Kharitonov I. A., В кн.: XVII Всероссийская научно-техническая конференция «Электроника, микро- и наноэлектроника»: 14 - 18 мая 2018 года, г. Суздаль, Россия.: М.: НИИСИ РАН, 2018. С. 82–83.
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Added: November 7, 2018
М.: НИИСИ РАН, 2018.
Сборник содержит программу и тезисы докладов 17-ой Всероссийской научно-технической конференции «Электроника, микро- и наноэлектроника», проводимой в г. Суздаль с 14 по 18 мая 2018 года Федеральным государственным учреждением «Федеральный научный центр Научно-исследовательский институт системных исследований Российской Академии наук», а также ООО «Галактический поток», при поддержке Российского Фонда Фундаментальных Исследований (Грант РФФИ № 18-07-20020).
Представленные тезисы отражают широкую панораму деятельности сотрудников ...
Added: November 7, 2018