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Book chapter

Измерение и моделирование влияния низкоинтенсивного излучения на цифровые КМОП ИС

С. 232-235.
Звягинцев Д. Е., Елисеева А. В., Куликов Н. А., Харитонов И. А., Самбурский Л. М.

Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad/s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate the critical value of the dose for the degradation of the parameters of the studied ICs.