Локально деформированные структуры на основе Ge как активная среда для кремниевой оптоэлектроники

С. 898–899.

Юрасов Д. В., Байдакова Н. А., Verbus V. A., Гусев Н. С., Машин А. И., Морозова Е. Е., Нежданов А. В., Новиков А. В., Скороходов Е. Е., Шенгуров Д. В., Яблонский А. Н.

The results of formation of locally stretched Ge microstructures and investigation of their optical properties are presented. Free-hanging Ge structures were obtained by optical lithography, plasma chemical etching and selective chemical etching using the "stress concentration" method. To provide heat dissipation from free-hanging structures, the scheme of their formation was modified so as to provide mechanical contact of the suspended part of the microstructure with the substrate. A significant increase in the intensity of the photoluminescence signal was demonstrated in the stretched regions of These microstructures and the possibility of increasing the maximum optical pumping power (which does not lead to irreversible changes) for microstructures in which the stretched part is mechanically in contact with the substrate, compared with free-hanging structures

Keywords: Photoluminescence, Фотолюминесценция, Ge microstructures, Ge микроструктуры

In book

Труды ХХIII Международного симпозиума «Нанофизика и наноэлектроника», 11-14 марта 2019, Нижний Новгород, т.2,

Т. 2: Полупроводниковые наноструктуры:. , Нижегородский государственный университет им. Н.И. Лобачевского, 2019.