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Influence of the doping type on the temperature dependencies of the photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures
Journal of Luminescence. 2021. Vol. 239. Article 118393.
Novikov I., Nadtochiy A., Potapov A. Y., Gladyshev A.
The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with
1550 nm range strained quantum wells have been studied. The heterostructures had nine In0.74Ga0.26As quantum
wells which were separated by In0.53Al0.20Ga0.27As barriers. The barriers were δ-doped with n- and p-type
dopants with different layer concentrations of charge carriers. The both p-type and n-type doping of barriers
leads to slight increase in the efficiency when doping level not exceeding values of (1–5)⋅1012 cm 2. Moreover,
doping with an n-type dopant leads to a significant increase in the width of the photoluminescence spectrum,
while doping with a p-type dopant leads to a decrease in its width, compared to a heterostructure with undoped
barrier layers.
Priority areas:
engineering science
Language:
English
Publication based on the results of:
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