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Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures
Photoluminescence and electroluminescence in InSb/InAs heterostructures with ultrathin InSb insertions grown by molecular-beam epitaxy have been systematically studied. Measurements were made in the temperature range from 2 to 300 K on a large set of samples of various designs, with both the InAs matrix and ultrathin InSb insertions grown by different methods. The primary goal of the study was to identify the main radiative recombination channels in these heterostructures. It is shown that optical transitions associated with acceptor impurity centers in the InAs matrix represent an important mechanism diminishing the efficiency of luminescence from InSb insertions at room temperature. The results obtained are important for development of optimal growth modes and design of the active region of light-emitting devices based on quantum-confined InSb/InAs structures emitting in the range 3–5 μm.