Quasi – 3D Electro-Thermal Simulation of Integrated Transistor Structures, IC Chips and Packages
New quasi – 3D numerical model for combined electrical and thermal analysis of integrated transistor structures,
IC chips and packages is presented. The general 3D heat transfer and electrical field problems are correctly transformed to the set of 2D equations for temperature and electrical potential distributions in different layers of the device. The complexity and CPU time of the electro-thermal analysis were many times reduced. The model details and results of electro-thermal simulation of different types of semiconductor devices and ICs are presented.