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Extension of Standard SPICE SiGe HBT Models in the Cryogenic Temperature Range
P. 1–5.
Although it has been demonstrated that the SiGe HBTs can achieve faster unloaded circuit speed at cryogenic temperature than at room temperature, modelling of the SiGe HBTs at low temperature has been limited. It is known that the standard SPICE models of bipolar transistor are effective and guarantee the valid results only up to a temperature of minus 100°C. Therefore, in this paper an accurate and robust compact SPICE SiGe HBT model for extended low temperature range up to minus 195°С is presented. Comparison of measurements and simulation results shows an error not more than 10-15%.
Kuzmin A. V., Хасанова Э. И., Хасанов С. С., Journal of Experimental and Theoretical Physics 2026 Vol. 169 No. 3 P. 306 –313
The single crystals of the layered organic conductor κ-BEDT-TTF₂Cu₂(CN)₃ were studied by X-ray diffraction and X-ray photoemission spectroscopy. The electronic structure of the conducting BEDT-TTF₂ layer and its Fermi surface details were analyzed by quantum chemical calculations within the DFT level theory based on structure model of the isolated positively charged conducting layers in a ...
Added: May 6, 2026
Petrosyants K. O., Kozhukhov M., Popov D. et al., Известия высших учебных заведений. Электроника 2024 Т. 29 № 5 С. 640–657
The operational amplifiers (Op-Amps) are widely used in electronic systems operating under conditions of exposure to ionizing radiation; hence the IC designer has a need to carry out circuit modeling considering radiation factors. The main problem of this method of the Op-Amps simulation is that in SPICE-like programs there are no adequate models of bipolar ...
Added: November 6, 2025
Petrosyants K. O., Kharitonov I. A., Tegin M. S., WSEAS Transactions on Circuits and Systems 2023 Vol. 22 P. 126–134
A scheme of automated multi-level electro-thermal modeling of power PCB modules using software tools Comsol at the device construction level, SPICE tool at the circuit level, and Asonika-TM tool at board level was proposed to improve the conventional design approach. The effectiveness of the proposed methodology is demonstrated in the example of electro-thermal analysis of ...
Added: November 6, 2025
Petrosyants K. O., Silkin D. S., D. A. Popov et al., Russian Microelectronics 2024 Vol. 53 No. 7 P. 737–743
With a decrease in the size of transistors, the conditions arise when the impact of one particle affects several transistors in the composition of a memory cell. Therefore, during simulation it is not sufficient to take into account one transistor directly hit by a particle. In this study, a full-size 3D model of two n-channel transistors ...
Added: November 6, 2025
Kharitonov I. A., Kofanov Y. N., Тегин М. С., Наноиндустрия 2023 Т. 16 № S9-1(119) С. 189–196
The paper presents a set of developed software tools to provide joint electro-thermal modeling of power electronic circuits on PCBs using Comsol, SPICE, Asonika-TM software tools. Examples of joint electro-thermal modeling of power electronic circuit on printed circuits have also been presented. ...
Added: May 21, 2023
Igor Kharitonov, Gleb Klopotov, Valentin Kobyakov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–5.
Added: July 26, 2022
Харитонов И.А., Белопашенцев А.С., Наноиндустрия 2022 Т. 15 № S8-1(113) С. 195–200
Using the enhanced capabilities of SPICE modeling of CMOS circuits and extended SPICE models of MOSFET with account for aging effects, the paper deals with quantitative estimates of the increased effects of hot carriers and dielectric breakdown on the characteristics of CMOS operational amplifiers, when the minimum size of transistors is reduced from 180 nm ...
Added: July 7, 2022
Zasimov P., Ryazantsev S. V., Tyurin D. et al., Monthly Notices of the Royal Astronomical Society 2021 Vol. 506 No. 3 P. 3499–3510
In this work, we have examined the radiation-induced synthetic chemistry occurring in an astrochemically important C2H2–CO system at the molecular level using a matrix isolation approach. The 1:1 C2H2···CO intermolecular complex of linear structure was obtained in the solid low-temperature (5 K) noble gas matrices by deposition of the C2H2/CO/Ng (Ng = Ar, Kr, Xe) gaseous mixtures and ...
Added: November 16, 2021
Kozhukhov M., Мухаметдинова А. Р., Проблемы разработки перспективных микро- и наноэлектронных систем (МЭС) 2021 № 4 С. 81–85
A SPICE macromodel of the SiGe HBTs taking into account aging effects is presented. It consists of the standard core model selected by the designer and an additional subcircuit taking into account the hot-carrier effects. The macromodel was included on SPICE-like simulators. The advantages of SPICE-model version of SiGe HBT are high accuracy of description for device ...
Added: November 15, 2021
Zaitsev-Zotov S., Кон И. А., Письма в Журнал экспериментальной и теоретической физики 2020 Т. 111 № 1 С. 45–49
Представлены результаты изучения поперечного магнетосопротивления дираковского полуметалла InBi с узловой линией. Обнаружено, что магнетосопротивление не является квадратичным. В области малых магнитных полей B < 0.1 Тл оно характеризуется повышенной кривизной, в области средних описывается суммой линейного и квадратичного вкладов, а в области больших магнитных полей B > 1 Тл приближается к квадратичному закону с кривизной, в несколько раз меньшей кривизны вблизи нулевого ...
Added: October 28, 2021
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M. et al., Наноиндустрия 2020 Т. 13 № S5-2 С. 386–392
Using a universal approach, SPICE models were developed for sub-100 nm MOSFET structures taking into account radiation and low-temperature effects, as well as a procedure for identifying model parameters based on the results of a full-scale/machine experiment. The approach consists of a combination of macromodeling based on the standard model from the SPICE simulator and ...
Added: April 11, 2021
Ryazantsev S. V., Zasimov P., Feldman V., Chemical Physics Letters 2020 Vol. 753 Article 137540
X-radiolysis of the noble-gas matrices containing both H2O and CO was investigated at 5 K using infrared spectroscopy. It was found that formic acid molecule (HCOOH) could be produced from the matrix-isolated H2O⋯CO complexes, either directly as a result of irradiation or upon the subsequent annealing activating the trans-HOCO + H reaction. The former way was ...
Added: February 10, 2021
K. O. Petrosyants, M. R. Ismail-Zade, L. M. Sambursky, Russian Microelectronics 2020 Vol. 49 No. 7 P. 501–506
The compact models of junction field effect transistors (JFETs) used in release-quality versions of SPICE-like programs are focused only on the standard temperatures ranging from –60 to 150°C and are unworkable for an electronic circuit design in the cryogenic temperature range (below –120°C). It this study, the Low-T SPICE model of the JFET for designing ...
Added: January 31, 2021
Zasimov P., Ryazantsev S. V., Tyurin D. et al., Monthly Notices of the Royal Astronomical Society 2020 Vol. 491 No. 4 P. 5140–5150
Investigations of the low-temperature radiation-induced transformations in the C2H2–H2O system are relevant to the chemistry occurring in interstellar and cometary ices. In this work, we applied a matrix isolation technique to study the radiation-driven evolution of this system at molecular level in order to get new mechanistic insight. The 1:1 C2H2⋅ ⋅ ⋅H2O complexes were prepared in ...
Added: January 21, 2021
Ismail-zade M. R., Sambursky L. M., В кн.: Международный форум «Микроэлектроника-2020». Школа молодых ученых. Сборник тезисов. Республика Крым, г. Ялта, 21-25 сентября 2020 г.: М.: МАКС Пресс, 2020. С. 229–232.
This paper presents Low-T SPICE models of sub-micron MOSFETs, designed to calculate electronic circuits in the cryogenic temperature range (down to 4 K). The procedure for extracting the Low-T SPICE model parameters based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in the cryogenic temperature range has been ...
Added: November 29, 2020
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., Cryogenics 2020 Vol. 108 P. 1–6
Compact Si JFET model for SPICE circuit simulation in the extended temperature range from 373 K down to 73 K (+100 °C…−200 °C) is proposed. It is based on the standard JFET model Level = 3 (Statz model) with the full set of temperature-dependent parameters in the cryogenic temperature range. The universal procedure for model ...
Added: April 24, 2020
Ростов н/Д: Издательство Фонд науки и образования, 2018.
The collection presents abstracts included in the program "38 Meetings on low temperature physics". The sequence of abstracts corresponds to the sequence in which the reports are placed in the program of the Meeting. ...
Added: October 31, 2019
Petrosyants K. O., Ismail-zade M. R., Sambursky L. M., Известия высших учебных заведений. Электроника 2019 Т. 24 № 2 С. 174–184
The JFET compact models used in commercial versions of SPICE-like software tools are oriented only to the standard range of –60 °C…+150 °C and are not suitable for simulation the electronic circuits in the range of cryogenic temperatures (below –120 °C). In the work the JEFT Low-T model, suitable for calculation of circuits in an ...
Added: June 5, 2019