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Book chapter

The Accounting of the Simultaneous Exposure of the Low Temperatures and the Penetrating Radiation at the Circuit Simulation of the BiJFET Analog Interfaces of the Sensors

P. 1-6.
Dvornikov O. V., Dziatlau V., Prokopenko N., Petrosyants K., Kozhukhov M. V., Tchekhovski V.

The article considers a choice of CAD system and
SPICE-models for the circuit simulation of characteristics of the
bipolar (BiJFET) analog integrated circuits (IC) at the exposure
of the penetrating radiation (PR) and the low temperatures. The
authors suggest a modified SPICE-model, which describes the
nonmonotonic change of the peak drain current and the slope of
the p-n junction FET (JFET) within the temperature range from
–200ºС to 30ºС.








In book

The Accounting of the Simultaneous Exposure of the Low Temperatures and the Penetrating Radiation at the Circuit Simulation of the BiJFET Analog Interfaces of the Sensors
Edited by: A. Kurishbaev, S. Mogilnyy, O. Stukach. IEEE, 2017.