2017 International Siberian Conference on Control and Communications (SIBCON)
The 13th Siberian conference SIBCON-2017, the oldest conference of IEEE in Siberia, aims to offer opportunities to learn and to share information on the latest advances in communications, electron devices, and control systems.
The article considers a choice of CAD system and SPICE-models for the circuit simulation of characteristics of the bipolar (BiJFET) analog integrated circuits (IC) at the exposure of the penetrating radiation (PR) and the low temperatures. The authors suggest a modified SPICE-model, which describes the nonmonotonic change of the peak drain current and the slope of the p-n junction FET (JFET) within the temperature range from –200ºС to 30ºС.
Graphene synthesis technology on substrates is promising, as is compatible with existing CMOS-technology. Knowledge about how to affect the substrate of choice for structural and electronic properties of graphene is important and opens up new opportunities in targeted influence on the properties of this unique material. Specialized measuring system was established to measure the galvanomagnetic characteristics of substrates multigraphene. Its structure and the measurement results are presented in the paper. For surface resistivity measurements we obtained samples were higher than that of natural graphite, but much lower than for samples of colloidal suspensions.