All known semiconductor temperature gauges are based on the use as temperature sensors in the electrical signal or resistor semiconductor or semiconductor diodes and transistors.
The questions of physics of bipolar transistors. Although the list of educational and scientific literature, which dealt with questions of the theory of transistors, very large, many years of experience teaching this section, solid-state electronics shows that universal tutorial not. An attempt is made to present fairly complex physical processes in the most simplified form. The formulas and diagrams necessary for students to complete course work in the above disciplines.
I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables, which introduces noticeable measurement error. In this paper I-V-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2- wire circuits are presented and compared to direct (without cables) measurements. Significant enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.
In this paper we analyze details of bipolar transistors and MOSFETs electrical characteristics measurement in the presence of neutron, electron and gamma irradiation. An automated measurement subsystem is developed with its core being a measurement kernel comprising a set of measurement instrumentation as well as methods of measurement and data processing for irradiated transistors of various types. Provided are several examples of the subsystem application to BJTs and MOSFETs radiation hardness investigation as well as extraction of their SPICE model parameters for circuit design.
A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled and simulated for Si/SiGe BJTs/HBTs and bulk/SOI MOSFETs as BiCMOS LSI’s components. The causes of device parameter degradation were discussed.