The effect of various regimes of plasma irradiation in the "Plasma focus" device on the surface structure of vanadium has been studied. It is established that at the plasma power density values of 108 – 1010 W/cm2 there are pores, microcracks and gas bubbles in the structure of material. In addition, as a result of the plasma action, the ejection of individual pieces of material from the irradiated vanadium surface was observed.
We investigate the diffusion of phosphorus in thermal SiO2 films of MIS structure and influence of the process on charge effects in gate dielectric and at interfaces in Fowler–Nordheim high-field tunnel injection of electrons. One rates the cross sections of electron traps in a phosphosilicate glass (PSG) film. We show that the density of electron traps increases with increasing the PSG film thickness. The ability of using a negative charge has been established. It is accumulated in the PSG film of MIS structures with double-layer SiO2–PSG gate dielectric during high-field tunnel injection of electrons, to modify MIS devices. It is shown that the use of a double-layer SiO2–PSG gate dielectric with concentration of phosphorus in PSG film of 0.4–0.9% allows one to increase the average amount of charge injected into a dielectric until breakdown and decrease the amount of defective structures with a low amount of charge injected into the dielectric before breakdown.