Using Injection-Thermal Treatment to Reduce Defectiveness of Dielectric Films of MIS Structures

Inorganic Materials: Applied Research. 2025. Vol. 16. No. 5. P. 1301–1305.

Andreev D. V., Kornev S. A., G. G. Bondarenko, Andreev V. V.

Injection-thermal treatment (ITT) of MIS structures in the mode of stepwise increase in highfield
injection current density bounded by the value of Jb, at which no noticeable processes of irreversible
charge degradation of the gate dielectric and its interface with the semiconductor occur, is under consideration.
The charge density injected into the gate dielectric during ITT should provide the revealing of samples
with external defects. It is established that injection-thermal treatment allows one to significantly reduce the
density of external defects in the dielectric film of MIS structures and exclude most of the samples with a
small charge injected until the breakdown. It is shown that, after injection-thermal treatment, the reliability
of MIS structures and devices based on them is determined mainly by internal defects of the dielectric film;
this significantly improves the reliability indicators of MIS devices.

Keywords: МДП-структура, gate dielectric, подзатворный диэлектрик, инжекционно-термическая обработка, MIS structure, injection-thermal treatment