Influence of Temperature on High-Field Injection Modification of MIS Structures with Thermal SiO2 Films Doped with Phosphorus

High Temperature Material Processes. 2019. Vol. 23. No. 4. P. 303–312.

Andreev D., Gennady G. Bondarenko, Andreev V., Maslovsky V., Stolyarov A.

The paper presents a study of the processes of electron trapping in metal–insulator–semiconductor
(MIS) structures with gate dielectric based on silicone dioxide doped with phosphorus under
high-field Fowler–Nordheim tunnel injection of electrons in a range of temperatures from 293 to
373 K. We have ascertained that the negative charge being trapped in phosphosilicate glass (PSG)
consisted of two components with a different energy of the thermal ionization ΔEa1 = 0.2–0.3 eV
and ΔEa2 = 1.0–1.2 eV. A part of the charge with a low energy of the thermal ionization virtually
drain off at annealing temperature of 473 K for a period of time of 20 min and then the dielectric
contains only the thermostable part of the negative charge that can be utilized to correct the threshold
voltage of MIS transistors. We have ascertained that an implementation of the high-field tunnel
injection of electrons for MIS structures with SiO2–PSG gate dielectric has raised not only density
of negative charge trapped but also its thermostable component.

Keywords: МДП-структура, тонкие пленки, thin films, двуокись кремния, MIS structure, silicone dioxide