Simulation of charge processes in dielectric films of MIS structures at simultaneous influence by ionization and high-field injection of electrons

Procedia Manufacturing. 2019. Vol. 37. P. 279–285.

Andreev D. V., Bondarenko G.G., Andreev V. V., Stolyarov A. A.

The paper presents model of processes of charge state changing of gate dielectric of MIS structure under conditions of simultaneous influence of radiation and high-field injection of electrons. The model takes into account the generation of positive charge by both radiation and high-field ionization and, besides, it takes into consideration the interaction of injected electrons with charges taken place in the dielectric film because of concurrent influence by ionizing radiation and high fields. We model an influence of radiation on charge state of the dielectric films of MIS structures in a wide range of influences by radiation and high-field injection of electrons. We study an influence of electric field strength and intensity of radiation on processes of generation and annihilation of positive charge accumulated in the gate dielectric because of both radiation and high-field ionization. We make suggestions on use of radiation MIS sensors which are utilized under conditions of high-field injection of electrons into the gate dielectric.

Keywords: МДП-структура, диэлектрическая пленка, MIS structure, high-field injection, dielectric film, высокополевая инжекция